2SD2641

2SD2641Darlington Equivalent circuit B C (70Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685) Application : Audio, Series Regulator and General Purpose sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics (Ta=25°C) Symbol Ratings Unit Symbol Conditions Ratings Unit VCBO 110 V ICBO VCB=110V 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 V V(BR)CEO IC=30mA 110min V IC 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max V PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–2A 60typ MHz Tstg –55 to +150 °C COB VCB=10V, f=1MHz 55typ pF ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) 30 6 5 10 –5 5 –5 0.8typ 6.2typ 1.1typ External Dimensions MT-100(TO3P) 15.6±0.4 9.6 4.8±0.2 2.0±0.1 1.8 5.0±0.2 19.9±0.3 4.0 2.0 20.0min 4.0max a ø3.2±0.1 b 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 5.45±0.1 5.45±0.1 BCE 1.4 Weight : Approx 6.0g a. Part No. b. Lot No. DC Current Gain hFE Collector Current IC(A) 5mA 1mA I C– V CE Characteristics (Typical) 6 0.5mA 0.4mA 0.3mA 4 0.2mA 2 IB=0.1mA 0 02 4 6 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) V CE( s a t ) – I B Characteristics (Typical) 3 I C– V BE Temperature Characteristics (Typ...