KHB9D0N90NA

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 900V, ID= 9A Drain-Source ON Resistance : RDS(ON)=1.05(Typ.) @VGS =10V Qg(typ.) =54nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient SYMBOL RATING VDSS 900 VGSS ID IDP EAS 30 9.0 36 900 EAR 20.5 dv/dt 4.5 280 PD 2.22 Tj 150 Tstg -55 150 UNIT V V A mJ mJ V/ns W W/ RthJC RthCS RthJA 0.45 0.24 40 /W /W /W D G Marking 1 KHB 9D0N90N A 725 2 H KHB9D0N90NA N CHANNEL MOS FIELD EFFECT TRANSISTOR A N O D E d PP 123 G L IF C J R Q 1. Gate 2. Drain 3. Source B K DIM MILLIMETERS A 15.60 +_ 0.20 B 4.80 +_ 0.20 C 19.90 +_ 0.20 D 2.00 +_ 0.20 d 1.00 +_ 0.20 E 3.00 +_ 0.20 F 3.80 +_ 0.20 G 3.50 +_ 0.20 H 13.90 +_ 0.20 I 12.76 +_ 0.20 J 23.40 +_ 0.20 M K 1.5+0.15-0.05 L 16.50 +_ 0.30 M 1.40 +_ 0.20 T N 13.60 +_ 0.20 O 9.60 +_ 0.20 P 5.45 ...