C5840

Power Transistors 2SC5840 Silicon NPN epitaxial planar type Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 φ 3.2±0.1 15.0±0.5 ■ Features High-speed switching (tstg: storage time/tf: fall time is short) Low collector-emitter saturation voltage VCE(sat) Superior forward current transfer ratio hFE linearity TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature TC = 25°C Ta = 25°C Storage temperature VCBO VCEO VEBO IC ICP PC Tj Tstg 80 80 5 3 5 15 2 150 −55 to +150 Unit V V V A A W °C °C 13.7±0.2 4.2±0.2 Solder Dip 1.4±0.2 1.6±0.2 0.8±0.1 2.6±0.1 0.55±0.15 2.54±0.30 5.08±0.50 123 1: Base 2: Collector 3: Emitter TO-220D-A1 Package Marking Symbol: C5840 Internal Connection C B E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCEO ICBO ICEO hFE1 hFE2 hFE3 VCE(sat)...