XL1000-BD

XL1000-BD Low Noise Amplifier 20.0-40.0 GHz Features  Self Bias Architecture  Small Size  3.0 or 5.0 V Operation  20.0 dB Small Signal Gain  2.0 dB Noise Figure  +9.0 dBm P1dB Compression Point  100% On-Wafer RF, DC and Noise Figure Testing  100% Visual Inspection to MIL-STD-883 Method 2010  RoHS* Compliant and 260°C Reflow Compatible Description M/A-COM Tech’s three stage 20.0-40.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 20.0 dB with a noise figure of 2.0 dB across the band. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Chip Device Layout Rev. V1 Absolute Maximum Ratings Parameter Absolute Max. Supply Voltage (Vd) Supply Current (Id) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)1 +7.0 VDC 70 mA +12 dBm -65 °C to +165 °C -55 °C to +85 °C +175 °C 1. Channel temperature directly affects a device's MTTF. Chan- nel temperature should be kept as low as possible to maximize lifetime. Ordering Information Part Number Package XL1000-BD-000V “V” - vacuum release gel paks XL1000-BD-EV1 evaluat...