Document
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
ƽHigh current capacity in compact package. IC = 0.8A.
ƽEpitaxial planar type. ƽNPN complement: L8050 ƽPb-Free Package is available. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L8050PLT1G
S-L8050PLT1G
80P
3000/Tape&Reel
L8050PLT3G
S-L8050PLT3G
80P
10000/Tape&Reel
L8050QLT1G
S- L8050QLT1G
1YC
3000/Tape&Reel
L8050QLT3G
S-L8050QLT3G
1YC
10000/Tape&Reel
L8050RLT1G
S-L8050RLT1G
1YE
3000/Tape&Reel
L8050RLT3G
S-L8050RLT3G
1YE
10000/Tape&Reel
L8050SLT1G L8050SLT3G
S-L8050SLT1G S-L8050SLT3G
80S 80S
3000/Tape&Reel 10000/Tape&Reel
MAXIMUM RATINGS Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-continuoun
THERMAL CHARACTERISTICS Characteristic
Total Device Dissipation FR-5 Board,(1) TA=25°C Derate above 25°C
Thermal Resistance,Junction to Ambient
Total Device Dissipation Alumina Substrate,(2) TA=25°C Derate above 25°C
Thermal Resistance,Junction to Ambient Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
VCEO VCBO VEBO
IC
Max 25 40 5 800
Unit V V V
mAdc
Symbol PD
R θJ A PD
R θJ A T j,T St g
Max
Unit
225 mW 1.8 mW/°C 556 °C/W
300 mW 2.4 mW/°C
417 -55 to +150
°C/W °C
L8050PLT1G Series
S-L8050PLT1G Series
3
1 2
SOT–23
COLLECTOR 3
1 BASE
2 EMITTER
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
L8050PLT1G Series
S-L8050PLT1G Series
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC=1.0mA)
V(BR)CEO
25
Emitter-Base Breakdown Voltage (IE=100µΑ)
V(BR)EBO
5
Collector-Base Breakdown Voltage (IC=100µΑ)
V(BR)CBO
40
Collector Cutoff Current (VCB=35V)
ICBO
–
Emitter Cutoff Current (VEB=4V)
IEBO –
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
–
–
– – –
–V
–V
–V 150 nA 150 nA
Charateristic
Symbol Min Typ Max Unit
DC Current Gain
IC=100mA,VCE=1V Collector-Emitter Saturation Voltage
hFE 100
- 600
(IC=800mA, IB =80mA)
VCE(sat)
-
- 0.5 V
NOTE :
*P hFE 100~200
Q 150~300
R 200-400
S 300-600
Rev.O 2/4
hFE
FIG.1 - Current Gain & Collector Current
1000
VCE=1V 100
10
1 0.001
0.01
0.1 1 10 Collector Current (mA)
100
1000
FIG.3 - On Voltage & Collector Current
1
VBE(ON) @ VCE=1V
0.1 0.01
0.1 1 10 100 Collector Current (mA)
1000
FIG.5 - Capacitance & Reverse-Biased Voltage
100
Cutoff Frequency (MHz)
Saturation Voltage (V)
LESHAN RADIO COMPANY, LTD.
L8050PLT1G
Series S-L8050PLT1G
Series
FIG.2 - Saturation Voltage & Collector Current
1
0.1
VCE(sat) @ IC=10IB
0.01 0.01
0.1 1 10 100 Collector Current (mA)
1000
FIG.4 - Cutoff Frequency & Collector Current
1000
VCE=10V 100
10
1
1 10 100 1000 Collector Current (mA)
10 Cob
1 0.1
1 10 Reverse-Biased Voltage (V)
100
On Voltage (V)
Capacitance (pF)
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
L8050PLT1G Series
S-L8050PLT1G Series
SOT-23
A L
3 BS
12 VG
C D H KJ
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L
0.0350 0.0401 0.89
1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
PIN 1. BASE 2. EMITTER 3. COLLECTOR
0.037 0.95
0.037 0.95
0.035 0.9
0.079 2.0
0.031 0.8
inches mm
Rev.O 4/4
.