LESHAN RADIO COMPANY, LTD.
Medium Power Transistor
(*32V, *0.5A)
L2SA1036KQLT1G Series
L2SA1036KQLT1G Series
FFeatu...
LESHAN RADIO COMPANY, LTD.
Medium Power
Transistor
(*32V, *0.5A)
L2SA1036KQLT1G Series
L2SA1036KQLT1G Series
FFeatures
S-L2SA1036KQLT1G Series
1) Large IC.
ICMax. = *500mA
2) Low VCE(sat). Ideal for low-voltage operation.
3
3) We declare that the material of product
compliance with RoHS requirements.
4) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
1 2
FStructure Epitaxial planar type
PNP silicon
transistor
SOT– 23 3
FDEVICE MARKING
1) L2SA1036KQLT1G=HQ S- L2SA1036KQLT1G=HQ
2) L2SA1036KRLT1G=HR S-L2SA1036KRLT1G=HR
1
2
PNP
FAbsolute maximum ratings (Ta = 25_C)
FORDERING INFORMATION
Device L2SA1036K*LT1G L2SA1036K*LT3G
Package SOT-23 SOT-23
Shipping 3000/Tape & Reel 10000/Tape & Reel
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
L 2SA1036KQLT1G Series S-L2SA1036KQLT1G Series
FElectrical characteristics (Ta = 25_C)
Parameter
Symbol
Collector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage
VCE(sat)
DC current transfer ration
hFE
Transition frequence
fT
Output capacitance
Cob
Min. — 40 — 32 —5
— — — 120 — —
Typ. — — — — — — — 200 7
Max. — — — —1 —1
— 0.4 390 — —
Unit V V V µA µA V —
MHZ pF
Conditions IC= — 100µA Ic= — 1mA IE= — 100µA VCB= — 20v VEB= — 4V IC/IB= — 100mA/ — 10mA VCE= — 3V,Ic= — 10mA...