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RJK0658DPA Dataheets PDF



Part Number RJK0658DPA
Manufacturers Renesas Technology
Logo Renesas Technology
Description N-Channel MOSFET
Datasheet RJK0658DPA DatasheetRJK0658DPA Datasheet (PDF)

RJK0658DPA 60V, 25A, 11.1mΩ max. N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Low drive current  High density mounting  Low on-resistance  Pb-free  Halogen-free Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5678 4321 4 G Preliminary Datasheet R07DS0344EJ0300 Rev.3.00 Apr 09, 2013 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain cu.

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RJK0658DPA 60V, 25A, 11.1mΩ max. N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Low drive current  High density mounting  Low on-resistance  Pb-free  Halogen-free Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5678 4321 4 G Preliminary Datasheet R07DS0344EJ0300 Rev.3.00 Apr 09, 2013 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAS Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 60 20 25 100 25 12.5 11.7 50 2.5 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W C/W C C R07DS0344EJ0300 Rev.3.00 Apr 09, 2013 Page 1 of 6 RJK0658DPA Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 V Gate to source leak current IGSS — — 0.1 A VGS = 20 V, VDS = 0 V Zero gate voltage drain current IDSS — — 1 A VDS = 60 V, VGS = 0 V Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V VDS = 10 V, ID = 1 mA Static drain to source on state resistance RDS(on) — 9.0 11.1 m ID = 12.5 A, VGS = 10 V Note4 Forward transfer admittance |yfs| — 36 — S ID = 12.5 A, VDS = 10 V Note4 Input capacitance Output capacitance Ciss Coss — 1580 — — 360 — pF VDS = 10 V, VGS = 0 V, pF f = 1 MHz Reverse transfer capacitance Crss — 100 — pF Gate Resistance Rg — 2.7 —  Total gate charge Gate to source charge Qg — 19.4 — nC VDD = 25 V, VGS = 10 V, Qgs — 8 — nC ID = 25 A Gate to drain charge Qgd — 3.2 — nC Turn-on delay time Rise time Turn-off delay time td(on) tr td(off) — 12 — ns VGS = 10 V, ID = 12.5 A, — 11 — ns VDD  30 V, RL = 2.4 , — 36 — ns Rg = 4.7  Fall time Body–drain diode forward voltage tf — 9.5 — ns VDF — 0.8 1.1 V IF = 25 A, VGS = 0 V Note4 Body–drain diode reverse recovery time trr — 35 — ns IF = 25 A, VGS = 0 V diF/ dt = 100 A/ s Notes: 4. Pulse test R07DS0344EJ0300 Rev.3.00 Apr 09, 2013 Page 2 of 6 Channel Dissipation Pch (W) RJK0658DPA Main Characteristics Power vs. Temperature Derating 80 60 40 20 Drain Current ID (A) 0 50 100 150 200 Case Temperature Tc (°C) Typical Output Characteristics 50 10 V 7.0 V 40 6.0 V 30 5.4 V 5.0 V 20 VGS = 4.6 V 10 Pulse Test 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 500 Pulse Test 400 300 200 ID = 20 A 100 10 A 5A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage VDS (on) (mV) R07DS0344EJ0300 Rev.3.00 Apr 09, 2013 Drain Current ID (A) Drain Current ID (A) Preliminary Maximum Safe Operation Area 1000 Tc = 25°C 1 shot Pulse 100 10 μs 100 μs 10 1 ms 1 PW = 10 ms Operation in 0.1 this area is limited by RDS(on) DC Operation 0.01 0.1 1 10 100 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 50 VDS = 10 V Pulse Test 40 30 20 Tc = 75°C 25°C 10 –25°C 0 2468 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 10 VGS = 10 V 1 0.1 1 10 100 1000 Drain Current ID (A) Page 3 of 6 RJK0658DPA Static Drain to Source on State Resistance vs. Temperature 30 Pulse Test ID = 12.5 A 25 20 15 VGS = 10 V 10 5 0 –25 0 25 50 75 100 125 150 Case Temperature Tc ( °C) Drain to Source Voltage VDS (V) Dynamic Input Characteristics 100 ID = 25 A 80 60 VDS VDD = 50 V 25 V 10 V 20 VGS 16 12 40 8 20 VDD = 50 V 4 25 V 10 V 00 0 8 16 24 32 40 Gate Charge Qg (nC) Maximum Avalanche Energy vs. Channel Temperature Derating 20 IAP = 12.5 A VDD = 20 V 16 duty < 0.1 % Rg ≥ 50 Ω 12 8 4 0 25 50 75 100 125 150 Channel Temperature Tch ( °C) Avalanche Energy EAS (mJ) Gate to Source Voltage VGS (V) Reverse Drain Current IDR (A) Capacitance C (pF) 10000 Preliminary Typical Capacitance vs. Drain to Source Voltage 1000 Ciss Coss 100 Crss VGS = 0 V f = 1 MHz 10 0 10 20 30 40 50 60 Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage 50 10 V 40 Pulse Test 30 20 10 VGS = 0 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) R07DS0344EJ0300 Rev.3.00 Apr 09, 2013 Page 4 of 6 RJK0658DPA Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.03 0.02 0.011shot pulse 0.01 10 μ 100 μ θch – c (t) = γ s (t) • θch – c θch – c = 2.5°C/W, Tc = 25°C PDM D = PW T PW T 1m 10 m 100 m Pulse Width PW (s) 1 10 Vin 15 V Avalanche Test Circuit VDS Monitor Rg L IAP Monitor D. U. T VDD Avalanche Waveform EAS = 1 2 L • IAP.


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