Document
RJK0658DPA
60V, 25A, 11.1mΩ max. N Channel Power MOS FET High Speed Power Switching
Features
High speed switching Low drive current High density mounting Low on-resistance Pb-free Halogen-free
Outline
RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F))
5678 4321
4 G
Preliminary Datasheet
R07DS0344EJ0300 Rev.3.00
Apr 09, 2013
5 678 D DDD
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S SS 1 23
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50 3. Tc = 25C
Symbol
VDSS
VGSS
ID ID(pulse)Note1
IDR IAP Note 2 EAS Note 2 Pch Note3 ch-c Note3
Tch
Tstg
Ratings 60 20 25 100 25 12.5 11.7 50 2.5 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W
C/W C C
R07DS0344EJ0300 Rev.3.00 Apr 09, 2013
Page 1 of 6
RJK0658DPA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
60
—
—
V ID = 10 mA, VGS = 0 V
Gate to source leak current
IGSS — — 0.1 A VGS = 20 V, VDS = 0 V
Zero gate voltage drain current
IDSS — — 1 A VDS = 60 V, VGS = 0 V
Gate to source cutoff voltage
VGS(off)
2.0
—
4.0
V VDS = 10 V, ID = 1 mA
Static drain to source on state resistance RDS(on) — 9.0 11.1 m ID = 12.5 A, VGS = 10 V Note4
Forward transfer admittance
|yfs| — 36 — S ID = 12.5 A, VDS = 10 V Note4
Input capacitance Output capacitance
Ciss Coss
— 1580 — — 360 —
pF VDS = 10 V, VGS = 0 V, pF f = 1 MHz
Reverse transfer capacitance
Crss
— 100 —
pF
Gate Resistance
Rg
— 2.7 —
Total gate charge Gate to source charge
Qg
— 19.4 —
nC VDD = 25 V, VGS = 10 V,
Qgs — 8 — nC ID = 25 A
Gate to drain charge
Qgd — 3.2 — nC
Turn-on delay time Rise time Turn-off delay time
td(on) tr
td(off)
— 12 — ns VGS = 10 V, ID = 12.5 A,
— 11 — ns VDD 30 V, RL = 2.4 , — 36 — ns Rg = 4.7
Fall time Body–drain diode forward voltage
tf — 9.5 — ns
VDF
— 0.8 1.1
V IF = 25 A, VGS = 0 V Note4
Body–drain diode reverse recovery time trr — 35 — ns IF = 25 A, VGS = 0 V diF/ dt = 100 A/ s
Notes: 4. Pulse test
R07DS0344EJ0300 Rev.3.00 Apr 09, 2013
Page 2 of 6
Channel Dissipation Pch (W)
RJK0658DPA
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
Drain Current ID (A)
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
50 10 V
7.0 V 40
6.0 V
30
5.4 V 5.0 V
20 VGS = 4.6 V
10
Pulse Test 0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
500 Pulse Test
400
300
200 ID = 20 A
100 10 A 5A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage VDS (on) (mV)
R07DS0344EJ0300 Rev.3.00 Apr 09, 2013
Drain Current ID (A)
Drain Current ID (A)
Preliminary
Maximum Safe Operation Area
1000 Tc = 25°C 1 shot Pulse
100
10 μs
100 μs
10
1 ms 1
PW = 10 ms Operation in 0.1 this area is
limited by RDS(on) DC Operation
0.01
0.1 1
10
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50 VDS = 10 V Pulse Test
40
30
20 Tc = 75°C 25°C
10 –25°C
0 2468
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance vs. Drain Current
100 Pulse Test
10 VGS = 10 V
1
0.1 1 10 100 1000
Drain Current ID (A)
Page 3 of 6
RJK0658DPA
Static Drain to Source on State Resistance vs. Temperature
30 Pulse Test ID = 12.5 A
25
20
15 VGS = 10 V
10
5
0 –25 0 25 50 75 100 125 150
Case Temperature Tc ( °C)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
100 ID = 25 A
80 60 VDS
VDD = 50 V 25 V
10 V
20 VGS
16
12
40 8
20
VDD = 50 V
4
25 V
10 V
00
0 8 16 24 32 40
Gate Charge Qg (nC)
Maximum Avalanche Energy vs. Channel Temperature Derating
20 IAP = 12.5 A VDD = 20 V
16 duty < 0.1 % Rg ≥ 50 Ω
12
8
4
0 25 50 75 100 125 150
Channel Temperature Tch ( °C)
Avalanche Energy EAS (mJ)
Gate to Source Voltage VGS (V) Reverse Drain Current IDR (A)
Capacitance C (pF)
10000
Preliminary
Typical Capacitance vs. Drain to Source Voltage
1000
Ciss
Coss
100 Crss
VGS = 0 V f = 1 MHz 10 0 10 20 30 40 50 60
Drain to Source Voltage VDS (V)
Reverse Drain Current vs. Source to Drain Voltage
50
10 V 40
Pulse Test
30
20 10 VGS = 0 V
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
R07DS0344EJ0300 Rev.3.00 Apr 09, 2013
Page 4 of 6
RJK0658DPA
Preliminary
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3 Tc = 25°C
1 D=1
0.5 0.3
0.2
0.1 0.1
0.05
0.03
0.02 0.011shot
pulse
0.01 10 μ
100 μ
θch – c (t) = γ s (t) • θch – c θch – c = 2.5°C/W, Tc = 25°C
PDM
D = PW T
PW T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Vin 15 V
Avalanche Test Circuit
VDS Monitor
Rg
L
IAP Monitor
D. U. T
VDD
Avalanche Waveform
EAS =
1 2
L • IAP.