2SC383TM(BR3DG383TMK)
Rev.C Feb.-2015
DATA SHEET
/ Descriptions TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic...
2SC383TM(BR3DG383TMK)
Rev.C Feb.-2015
DATA SHEET
/ Descriptions TO-92
NPN 。Silicon
NPN transistor in a TO-92 Plastic Package.
/ Features :Gpe=33dB()(f=45MHz),hFE 。 High gain: Gpe=33dB(Typ)(f=45MHz),good linearity of hFE..
/ Applications 。 TV final picture IF amplifier applications.
/ Equivalent Circuit
/ Pinning
1 23
PIN1：Base
PIN 2：Collector
PIN 3：Emitter
/ hFE Classifications & Marking 。See Marking Instructions.
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2SC383TM(BR3DG383TMK)
Rev.C Feb.-2015
DATA SHEET
/ Absolute Maximum Ratings(Ta=25℃)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Emitter Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range
Symbol
VCBO VCEO VEBO
IC IE PC Tj Tstg
/ Electrical Characteristics(Ta=25℃)
Rating
50 45 4.0 50 -50 300 150 -55～150
Unit
V V V mA mA mW ℃
℃
Parameter
Collector to Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage
Transition Frequency
Symbol
VCEO ICBO IEBO hFE VCE(sat)
VBE(sat) fT
Collector Output Capacitance
Cob
Power Gain
Gpe
Collector to Base Time Constant CC.rbb
Test Conditions
Min Typ Max
IC=10mA IB=0 VCB=50V IE=0 VEB=3.0V IC=0 VCE=12.5V IC=12.5mA IC=15mA IB=1.5mA
45 20
0.1 0.1 100 0.2
IC=15mA
VCE=12.5V VCB=10V f=1MHz VCC=12.5V f=45MHz VCB=10V f=30MHz
IB=1.5mA IC=12.5m...
