RJK03N3DPA
30V, 35A, 4.7mΩmax. Built in SBD N Channel Power MOS FET High Speed Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free
Outline
Preliminary Datasheet
R07DS0784EJ0200 Rev.2.00
Feb 12, 2013
RENESAS Package code: PWSN0008DE-A (Package ...
