FDD14AN06LA0

FDD14AN06LA0 January 2004 FDD14AN06LA0 N-Channel PowerTrench® MOSFET 60V, 50A, 14.6mΩ Features rDS(ON) = 12.8mΩ (Typ.), VGS = 5V, ID = 50A Qg(tot) = 25nC (Typ.), VGS = 5V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 Formerly developmental type 83557 Applications Motor / Body Load Control ABS Systems Powertrain Management Injection Systems DC-DC converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems DRAIN (FLANGE) D GATE SOURCE G TO-252AA FDD SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 100oC, VGS = 10V) Continuous (TC < 80oC, VGS = 5V) Continuous (Tamb = 25oC, VGS = 5V, with RθJA = 52oC/W) Pulsed EAS Single Pulse Avalanche Energy (Note 1) Power dissipation PD Derate above 25oC TJ, TSTG Operating and Storage Temperature S Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area Ratings 60 ±20 50 50 9.5 Figure 4 55 125 0.83 -55 to 175 1.2 100 52 Units V V A A A A mJ W W/oC oC oC/W oC/W oC/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: h...