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L2SD2114KWLT3G Dataheets PDF



Part Number L2SD2114KWLT3G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description NPN silicon transistor
Datasheet L2SD2114KWLT3G DatasheetL2SD2114KWLT3G Datasheet (PDF)

Epitaxial planar type LESHAN RADIO COMPANY, LTD. NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1) High DC current gain. S-L2SD2114KVLT1G Series hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 1 2 4) We declare that the material of product compliance with RoHS requirements. 5) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qual.

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Epitaxial planar type LESHAN RADIO COMPANY, LTD. NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1) High DC current gain. S-L2SD2114KVLT1G Series hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 1 2 4) We declare that the material of product compliance with RoHS requirements. 5) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SOT– 23 (TO–236AB) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage VCBO VCEO VEBO Collector current IC Collector power dissipation Junction temperature Storage temperature ∗ Single pulse Pw=100ms PC Tj Tstg Limits 25 20 12 0.5 1 0.2 150 −55∼+150 Unit V V V A(DC) A(Pulse) ∗ W °C °C COLLECTOR 3 1 BASE 2 EMITTER zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) 25 20 12 − − − − − − − − 0.18 − − − 0.5 0.5 0.4 V IC=10µA V IC=1mA V IE=10µA µA VCB=20V µA VEB=10V V IC/IB=500mA/20mA DC current transfer ratio Transition frequency Output capacitance Output On-resistance ∗ Measured using pulse current hFE 820 − 2700 − VCE=3V, IC=10mA fT∗ − 350 − MHz VCE=10V, IE=−50mA, f=100MHz Cob − 8.0 − pF VCB=10V, IE=0A, f=1MHz Ron − 0.8 − pF IB=1mA, Vi=100mV(rms), f=1kHz ƽ hFE Values Classification, Device Marking and Ordering Information Device L2SD2114KVLT1G S-L2SD2114KVLT1G hFE 820~1800 Marking BV Shipping 3000/Tape&Reel L2SD2114KVLT3G S-L2SD2114KVLT3G 820~1800 BV 10000/Tape&Reel L2SD2114KWLT1G S-L2SD2114KWLT1G L2SD2114KWLT3G S-L2SD2114KWLT3G 1200~2700 1200~2700 BW 3000/Tape&Reel BW 10000/Tape&Reel Rev.O 1/4 zElectrical characteristic curves COLLECTOR CURRENT : IC(mA) 2.0 Ta=25˚C 1.6 2.0µA 1.8µA 1.2 1.6µA 1.4µA 1.2µA 1.0µA 0.8µA 0.8 0.6µA 0.4µA 0.4 0.2µA 0 IB=0 0 0.1 0.2 0.3 0.4 0.5 COLLECTOR TO EMITTER VOLTAGE : VCE(V) Fig.1 Grounded emitter output characteristics(Ι) COLLECTOR CURRENT : IC(mA) LESHAN RADIO COMPANY, LTD. L2SD2114KVLT1G Series S-L2SD2114KVLT1G Series 1000 1.8mA 2.0mA 1.6mA 1.4mA 800 1.2mA 1.0mA 600 0.8mA 0.6mA 400 0.4mA 0.2mA 200 Ta=25°C Measured using 0 IB=0mA pulse current. 0 2 4 6 8 10 COLLECTOR TO EMITTER VOLTAGE : VCE(V) Fig.2 Grounded emitter output characteristics(ΙΙ) COLLECTOR CURRENT : IC(mA) 1000 500 200 100 50 Ta=100°C 25°C −25°C VCE=3V Measured using pulse current. 20 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 BASE TO EMITTER VOLTAGE : VBE(V) Fig.3 Grounded emitter propagation characteristics COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) DC CURRENT GAIN : hFE 10000 5000 2000 1000 500 200 100 50 Ta=25°C Measured using pulse current. VCE=5V 3V 1V 20 10 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC(mA) Fig.4 DC current gain vs. collector current(Ι) DC CURRENT GAIN : hFE 10000 5000 2000 1000 500 200 100 50 VCE=3V Measured using pulse current. Ta=100°C 25°C −25°C 20 10 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC(mA) Fig.5 DC current gain vs. collector current(ΙΙ) 2000 1000 500 Ta=25°C Measured using pulse current. 200 100 50 IC/IB=100 20 50 25 10 10 5 2 1 2 5 10 20 50 100 200 5001000 COLLECTOR CURRENT : IC(mA) Fig.6 Collector-emitter saturation voltage vs. collector current(Ι) BASE SATURATION VOLTAGE : VBE(sat) (mV) BASE SATURATION VOLTAGE : VBE(sat)(mV) 2000 1000 500 IC/IB=25 Measured using pulse current. 200 100 Ta=100°C 50 25°C −25°C 20 10 5 2 1 2 5 10 20 50 100 200 5001000 COLLECTOR CURRENT : IC(mA) Fig.7 Collector-emitter saturation voltage vs. collector current(ΙΙ) 10000 5000 2000 1000 500 IC/IB=10 25 50 100 Ta=25°C Pulsed 200 100 50 20 10 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC(mA) Fig.8 Base-emitter saturation voltage vs. collector current(Ι) 10000 5000 2000 1000 500 Ta=−25°C 25°C 100°C lC/lB=10 Measured using pulse current. 200 100 50 20 10 12 5 10 20 50 100 200 5001000 COLLECTOR CURRENT : IC(mA) Fig.9 Base-emitter saturation voltage vs. collector current(ΙΙ) COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) Rev.O 2/4 TRANSITION FREQUENCY : fT (MHz) COLLECTOR OUTPUT CAPACITANCE : Cob(pF) ON RESISTANCE : Ron(Ω) LESHAN RADIO COMPANY, LTD. L2SD2114KVLT1G Series S-L2SD2114KVLT1G Series 10000 5000 2000 1000 500 Ta=25°C VCE=10V Measured using pulse current. 200 100 50 20 10 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000 EMITTER CURRENT : IE(mA) Fig.10 Gain bandwidth product vs. emitter current 1000 500 200 100 50 Ta=25°C f=1MHz IE=0A 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.11 Collector output capacitance vs. collector-base voltage 100 Ta=25°C 50 f=1kHz Vi=100mV(rms) 20 RL=1kΩ 10 5 2 1 0.5 .


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