Document
Epitaxial planar type
LESHAN RADIO COMPANY, LTD.
NPN silicon transistor
L2SD2114KVLT1G Series
zFeatures 1) High DC current gain.
S-L2SD2114KVLT1G Series
hFE = 1200 (Typ.)
2) High emitter-base voltage. VEBO =12V (Min.)
3
3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)
1 2
4) We declare that the material of product compliance with RoHS requirements.
5) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
SOT– 23 (TO–236AB)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage Collector-emitter voltage Emitter-base voltage
VCBO VCEO VEBO
Collector current
IC
Collector power dissipation
Junction temperature Storage temperature
∗ Single pulse Pw=100ms
PC
Tj Tstg
Limits 25 20 12 0.5 1
0.2
150 −55∼+150
Unit V V V
A(DC)
A(Pulse) ∗
W
°C °C
COLLECTOR 3
1 BASE
2 EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage
BVCBO BVCEO BVEBO
ICBO IEBO VCE(sat)
25 20 12 − − −
− − − − − 0.18
− − − 0.5 0.5 0.4
V IC=10µA V IC=1mA V IE=10µA µA VCB=20V µA VEB=10V V IC/IB=500mA/20mA
DC current transfer ratio
Transition frequency Output capacitance Output On-resistance
∗ Measured using pulse current
hFE 820 − 2700 − VCE=3V, IC=10mA
fT∗ − 350 − MHz VCE=10V, IE=−50mA, f=100MHz
Cob − 8.0 − pF VCB=10V, IE=0A, f=1MHz Ron − 0.8 − pF IB=1mA, Vi=100mV(rms), f=1kHz
ƽ hFE Values Classification, Device Marking and Ordering Information
Device L2SD2114KVLT1G S-L2SD2114KVLT1G
hFE 820~1800
Marking BV
Shipping 3000/Tape&Reel
L2SD2114KVLT3G S-L2SD2114KVLT3G
820~1800
BV 10000/Tape&Reel
L2SD2114KWLT1G S-L2SD2114KWLT1G
L2SD2114KWLT3G S-L2SD2114KWLT3G
1200~2700 1200~2700
BW 3000/Tape&Reel BW 10000/Tape&Reel
Rev.O 1/4
zElectrical characteristic curves
COLLECTOR CURRENT : IC(mA)
2.0 Ta=25˚C
1.6 2.0µA 1.8µA
1.2
1.6µA 1.4µA 1.2µA 1.0µA
0.8µA
0.8 0.6µA
0.4µA 0.4
0.2µA
0 IB=0 0 0.1 0.2 0.3 0.4 0.5
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.1 Grounded emitter output characteristics(Ι)
COLLECTOR CURRENT : IC(mA)
LESHAN RADIO COMPANY, LTD. L2SD2114KVLT1G Series
S-L2SD2114KVLT1G Series
1000 1.8mA 2.0mA
1.6mA 1.4mA 800
1.2mA
1.0mA 600 0.8mA
0.6mA
400 0.4mA
0.2mA 200
Ta=25°C Measured using 0 IB=0mA pulse current. 0 2 4 6 8 10
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.2 Grounded emitter output characteristics(ΙΙ)
COLLECTOR CURRENT : IC(mA)
1000 500
200 100
50
Ta=100°C
25°C −25°C
VCE=3V Measured using
pulse current.
20 10
5
2
1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE(V)
Fig.3 Grounded emitter propagation characteristics
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
DC CURRENT GAIN : hFE
10000 5000
2000 1000
500
200 100
50
Ta=25°C Measured using pulse current.
VCE=5V
3V 1V
20 10
1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC(mA)
Fig.4 DC current gain vs. collector current(Ι)
DC CURRENT GAIN : hFE
10000 5000
2000 1000
500
200 100
50
VCE=3V Measured using pulse current.
Ta=100°C 25°C −25°C
20 10
1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC(mA)
Fig.5 DC current gain vs. collector current(ΙΙ)
2000 1000
500
Ta=25°C Measured using pulse current.
200
100
50 IC/IB=100
20 50 25
10 10 5
2 1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : IC(mA)
Fig.6 Collector-emitter saturation voltage vs. collector current(Ι)
BASE SATURATION VOLTAGE : VBE(sat) (mV)
BASE SATURATION VOLTAGE : VBE(sat)(mV)
2000 1000
500
IC/IB=25 Measured using pulse current.
200
100 Ta=100°C
50 25°C −25°C
20
10
5
2 1 2 5 10 20 50 100 200 5001000 COLLECTOR CURRENT : IC(mA)
Fig.7 Collector-emitter saturation voltage vs. collector current(ΙΙ)
10000 5000
2000 1000
500
IC/IB=10 25 50
100
Ta=25°C Pulsed
200 100
50
20 10
1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC(mA)
Fig.8 Base-emitter saturation voltage vs. collector current(Ι)
10000 5000
2000 1000
500
Ta=−25°C
25°C 100°C
lC/lB=10 Measured using pulse current.
200 100
50
20
10 12
5 10 20 50 100 200 5001000
COLLECTOR CURRENT : IC(mA)
Fig.9 Base-emitter saturation voltage vs. collector current(ΙΙ)
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
Rev.O 2/4
TRANSITION FREQUENCY : fT (MHz) COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
ON RESISTANCE : Ron(Ω)
LESHAN RADIO COMPANY, LTD. L2SD2114KVLT1G Series
S-L2SD2114KVLT1G Series
10000 5000
2000 1000
500
Ta=25°C
VCE=10V Measured using
pulse current.
200 100
50
20 10
-1 -2
-5 -10 -20 -50 -100 -200 -500 -1000
EMITTER CURRENT : IE(mA)
Fig.10 Gain bandwidth product vs. emitter current
1000 500
200 100 50
Ta=25°C
f=1MHz IE=0A
20 10
5
2 1 0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig.11 Collector output capacitance vs. collector-base voltage
100 Ta=25°C
50 f=1kHz Vi=100mV(rms)
20 RL=1kΩ
10
5
2 1 0.5
.