LMBTH10LT1G

LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering Information LMBTH10LT1G S-LMBTH10LT1G Device LMBTH10LT1G S-LMBTH10LT1G LMBTH10LT3G S-LMBTH10LT3G Marking 3EM 3EM Shipping 3000/Tape&Reel 10000/Tape&Reel MAXIMUM RATINGS Rating Symbol Value Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage V CEO V CBO V EBO 25 30 3.0 Unit Vdc Vdc Vdc 3 1 2 SOT–23 3 COLLECTOR THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING Symbol PD RθJA PD RθJA TJ , Tstg Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 mW/°C 417 –55 to +150 °C/W °C 1 BASE 2 EMITTER (S-)LMBTH10LT1G = 3EM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 1.0 mAdc, I B= 0 ) Collector–Base Breakdown Voltage (I C = 100 µAdc , I E = 0) Emitter–Base Breakdown Voltage (I E = 10 µAdc , I C= 0) Collector Cutoff Current ( V CB = 25Vdc , I E = 0 ) Collector Cutoff Current ( V CB = 30Vdc , I E = 0 ) E...