LMBTA56LT3G

LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon ●FEATURES 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ●DEVICE MARKING AND ORDERING INFORMATION Device LMBTA56LT1G LMBTA56LT3G Marking 2GM 2GM Shipping 3000/Tape&Reel 10000/Tape&Reel ●MAXIMUM RATINGS(Ta = 25℃) Parameter Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Limits -80 -80 -4.0 -500 ●THERMAL CHARACTERISTICS Parameter Symbol Total Power Dissipation FR-5 PD Board,(Note 1.)@Ta = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient RθJA Total Power Dissipation Alumina Substrate,(Note 2.)@Ta = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient PD RθJA Junction and Storage Temperature Range TJ, Tstg 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Limits 225 1.8 556 300 2.4 417 –55 to +150 Unit mW °C/W °C/W mW °C/W °C/W °C LMBTA56LT1G S-LMBTA56LT1G 3 1 2 SOT–23 3 COLLECTOR 1 BASE Unit Vdc Vdc Vdc mAdc 2 EMITTER July , 2015 Rev .A 1/5 LESHAN RADIO COMPANY, LTD. LMBTA56LT1G,S-LMBTA56LT1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) Characteristic Symbol Collector–Emitter Breakdown Voltage(Note 3.) VBR(CEO) (IC = - 1 mAdc, I B = 0) Emitter–Base Breakdown Voltage (I E...