B1019

SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1412 APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Product Specification 2SB1019 Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector -emitter voltage VEBO Emitter-base voltage IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector Ta=25 TC=25 VALUE -70 -50 -5 -7 -1 2 30 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com Product Specification 2SB1019 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -50 V VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A -0.2 -0.4 V VBEsat Base-emitter saturation voltage IC=-4A ;IB=-0.4A -0.9 -1.2 V ICBO Collector cut-off current VCB=-70V; IE=0 -30 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 µA hFE-1 DC current gain IC=-1A ; VCE=-1V 70 240 hFE-2 DC current gain IC=-4A ; VCE=-1V 30 fT Transition frequency IC=-1A ; VCE=-4V 10 MHz COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 250 pF Swit...