Document
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
• Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V
ESD Rating – Machine Model: >400 V
• We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC846ALT1G Series
S-LBC846ALT1G Series
3
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage LBC846
LBC847, LBC850 LBC848, LBC849
VCEO
Collector–Base Voltage LBC846
LBC847, LBC850 LBC848, LBC849
VCBO
Emitter–Base Voltage LBC846
LBC847, LBC850 LBC848, LBC849
VEBO
Collector Current – Continuous THERMAL CHARACTERISTICS
IC
Characteristic
Symbol
Total Device Dissipation FR–5 Board
(Note 1.)
TA = 25°C Derate above 25°C
PD
Thermal Resistance, Junction to Ambient (Note 1.)
RqJA
Total Device Dissipation
Alumina Substrate (Note 2.)
TA = 25°C Derate above 25°C
PD
Thermal Resistance, Junction to Ambient (Note 2.)
RqJA
Junction and Storage Temperature Range
TJ, Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Value
65 45 30
80 50 30
6.0 6.0 5.0 100
Max 225
1.8 556
300
2.4 417
–55 to +150
Unit Vdc
Vdc
Vdc
mAdc Unit mW mW/°C °C/W mW mW/°C °C/W °C
1 2
SOT–23
1 B ASE
3 COLLECT OR
2 EMIT T ER
MARKING DIAGRAM 3
xx
12 xx= Device Marking (See Table Below)
Rev.A 1/13
LESHAN RADIO COMPANY, LTD. LBC846ALT1G Series
S-LBC846ALT1G Series
DEVICE MARKING AND ORDERING INFORMATION
Device
LBC846ALT1G S-LBC846ALT1G
LBC846ALT3G S-LBC846ALT3G
LBC846BLT1G LBC846BLT1G
LBC846BLT3G S-LBC846BLT3G
LBC847ALT1G S-LBC847ALT1G
LBC847ALT3G S-LBC847ALT3G
Marking 1A
1A 1B
1B 1E
1E
LBC847BLT1G S-LBC847BLT1G
LBC847BLT3G S-LBC847BLT3G
1F 1F
LBC847CLT1G S-LBC847CLT1G
LBC847CLT3G S-LBC847CLT3G
LBC848ALT1G S-LBC848ALT1G
LBC848ALT3G S-LBC848ALT3G
1G 1G 1J
1J
LBC848BLT1G S-LBC848BLT1G
LBC848BLT3G S-LBC848BLT3G
LBC848CLT1G S-LBC848CLT1G
LBC848CLT3G S-LBC848CLT3G
LBC849BLT1G S-LBC849BLT1G
LBC849BLT3G S-LBC849BLT3G
LBC849CLT1G S-LBC849CLT1G
LBC849CLT3G S-LBC849CLT3G
LBC850BLT1G S-LBC850BLT1G
LBC850BLT3G S-LBC850BLT3G
LBC850CLT1G S-LBC850CLT1G
LBC850CLT3G S-LBC850CLT3G
1K 1K 1L
1L 2B 2B 2C
2C 2E
2E 2G 2G
Package SOT-23 SOT-23 SOT-23
SOT-23 SOT-23
SOT-23 SOT-23
SOT-23 SOT-23 SOT-23 SOT-23
SOT-23 SOT-23
SOT-23 SOT-23
SOT-23 SOT-23
SOT-23 SOT-23
SOT-23 SOT-23
SOT-23 SOT-23 SOT-23
Shipping 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel
10000/Tape&Reel 3000/Tape&Reel
10000/Tape&Reel 3000/Tape&Reel
10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel
10000/Tape&Reel 3000/Tape&Reel
10000/Tape&Reel 3000/Tape&Reel
10000/Tape&Reel 3000/Tape&Reel
10000/Tape&Reel 3000/Tape&Reel
10000/Tape&Reel 3000/Tape&Reel
10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel
Rev.A 2/13
LESHAN RADIO COMPANY, LTD. LBC846ALT1G Series
S-LBC846ALT1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage LBC846A,B
(IC = 10 mA)
LBC847A,B,C, LBC850B,C LBC848A,B,C, LBC849B,C
V(BR)CEO 65
–
–
V
45 –
–
30 –
–
Collector–Emitter Breakdown Voltage LBC846A,B
(IC = 10 µA, VEB = 0)
LBC847A,B,C, LBC850B,C LBC848A,B,C, LBC849B,C
V(BR)CES 80
–
–
V
50 –
–
30 –
–
Collector–Base Breakdown Voltage (IC = 10 mA)
LBC846A,B LBC847A,B,C, LBC850B,C LBC848A,B,C, LBC849B,C
V(BR)CBO 80
–
–
V
50 –
–
30 –
–
Emitter–Base Breakdown Voltage (IE = 1.0 mA)
LBC846A,B LBC847A,B,C, LBC850B,C LBC848A,B,C, LBC849B,C
V(BR)EBO 6.0
–
–
V
6.0 –
–
5.0 –
–
Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C)
ICBO
– –
– 15 nA – 5.0 µA
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 mA, VCE = 5.0 V)
LBC846A, LBC847A, LBC848A LBC846B, LBC847B, LBC848B,
LBC849B, LBC850B
LBC847C, LBC848C, LBC849C, LBC850C
hFE – 110 180 220 200 290 450
420 520 800
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
– –
– 0.25 V – 0.6
Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
–
0.7
–
– 0.9 –
V
Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base–Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
660
700
mV
– – 770
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT 100 – – MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA, (VCE = 5.0 Vdc, RS = 2.0 kΩ
f = 1.0 kHz, BW = 200 Hz)
LBC846A,B, LBC847A,B,C, LBC848A,B,C LBC849B,C, LBC850B,C
Cobo NF
–
– –
– 4.5 pF
dB – 10 – 4.0
Rev.A 3/13
hFE, DC CURRENT GAIN
LESHAN RADIO COMPANY, LTD. LBC846ALT1G Series
S-LBC846ALT1G Series
LBC846A, LBC847A, LBC848A
300 150°C
200 25°C
100 −55°C
VCE = 1 V
0 0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector Current
1
1.0 0.9 IC/IB .