LESHAN RADIO COMPANY, LTD.
General Purpose Transistors PNP Silicon
• Moisture Sensitivity Level: 1 • ESD Rating – Huma...
LESHAN RADIO COMPANY, LTD.
General Purpose
Transistors
PNP Silicon
Moisture Sensitivity Level: 1 ESD Rating – Human Body Model: >4000 V
ESD Rating – Machine Model: >400 V
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC857CLT1G S-LBC857CLT1G
Series
3
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Collector-Emitter Voltage
LBC856
LBC857
LBC858, LBC859
VCEO
–65 –45 –30
Collector-Base Voltage
LBC856
LBC857
LBC858, LBC859
VCBO
–80 –50 –30
Emitter–Base Voltage Collector Current – Continuous THERMAL CHARACTERISTICS
VEBO IC
–5.0 –100
Characteristic
Symbol Max
Total Device Dissipation FR–5 Board,
(Note 1.) TA = 25°C Derate above 25°C
PD 225
1.8
Thermal Resistance, Junction to Ambient
RqJA
556
Total Device Dissipation Alumina
Substrate, (Note 2.) TA = 25°C Derate above 25°C
PD 300
2.4
Thermal Resistance, Junction to Ambient
RqJA
417
Junction and Storage Temperature
TJ, Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
–55 to +150
Unit V
V
V mAdc
Unit mW mW/°C °C/W
mW mW/°C °C/W
°C
1 2
SOT–23
1 B ASE
3 COLLECT OR
2 EMIT T ER
MARKING DIAGRAM 3
xx
12 xx= Device Marking (See Table Below)
Rev.O 1/7
LESHAN RADIO COMPANY, LTD.
LBC857CLT1G Series S-LBC857CLT1G Series
DEVICE MARKING AND ORDERING INFORMATION
Device...