LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
• We declare that the material of product compliance...
LESHAN RADIO COMPANY, LTD.
General Purpose
Transistors
NPN Silicon
We declare that the material of product compliance with RoHS requirements.
LBC817-16LT1G LBC817-25LT1G LBC817-40LT1G
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage
V CEO V CBO V EBO
Collector Current — Continuous I C
Value 45 50 5.0 500
Unit V V V
mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol PD
R θJA PD
R θJA T J , T stg
Max Unit
225 mW 1.8 mW/°C 556 °C/W
300 2.4 417 –55 to +150
mW mW/°C °C/W
°C
DEVICE MARKING
LBC817–16LT1G = 6A; LBC817–25LT1G = 6B; LBC817–40LT1G = 6C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –10 mA) Collector–Emitter Breakdown Voltage (VEB = 0, IC = –10 µA) Emitter–Base Breakdown Voltage (I E = –1.0 µA) Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150°C) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO V (BR)CES V (BR)EBO
I CBO
45 50 5.0
— —
Typ
— — —
— —
3
1 2
SOT–23
1 BASE
3 COLLECTOR
2 EMITTER
Max Unit
—V —V —V
100 nA 5.0 µA
1/3
LESHAN RADIO COMPANY, LTD.
LBC817-16LT1G LBC817-25LT1G...