Document
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO(max) = -45 V. ƽGeneral purpose switching and amplification. ƽPNP complement: LBC807 Series. ƽ We declare that the material of product compliance with RoHS requirements. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBC807-16LT1G
5A1 3000/Tape&Reel
LBC807-16LT3G
5A1 10000/Tape&Reel
LBC807-25LT1G
5B1 3000/Tape&Reel
LBC807-25LT3G
5B1 10000/Tape&Reel
LBC807-40LT1G
5C1 3000/Tape&Reel
LBC807-40LT3G
5C1 10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value –45 –50 –5.0 –500
Unit V V V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol PD
R θJA PD
R θJA T J , T stg
Max Unit
225 mW 1.8 mW/°C
556 °C/W
300 2.4 417
–55 to +150
mW mW/°C °C/W
°C
3
1 2
SOT–23
1 BASE
3 COLLECTOR
2 EMITTER
Rev.O 1/10
LESHAN RADIO COMPANY, LTD.
LBC807-16LT1G,LBC807-25LT1G,LBC807-40LT1G S-LBC807-16LT1G,S-LBC807-25LT1G,S-LBC807-40LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ Max Unit
OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) Collector–Emitter Breakdown Voltage (VEB = 0, IC = –10 µA) Emitter–Base Breakdown Voltage (IE = –1.0 µA) Collector Cutoff Current (V CB = –20 V) (V CB = –20 V, TJ = 150°C)
V(BR)CEO
V(BR)CES
V(BR)EBO I CBO
–45 — — V
–50 — — V
–5.0 — — V
—
—
–100
nA
— — –5.0 µA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC= –100 mA, VCE = –1.0 V)
LBC807–16 LBC807–25
LBC807–40
(IC = –500 mA, VCE = –1.0 V)
Collector–Emitter Saturation Voltage
(IC = –500 mA, IB = –50 mA)
Base–Emitter On Voltage
(IC = –500 mA, V CE= –1.0 V)
h FE
V CE(sat) V BE(on)
— 100 — 250 160 — 400 250 — 600 40 — —
—
— –0.7
V
— — –1.2 V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product (IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = –10 V, f = 1.0 MHz)
fT C obo
100 — — MHz — 10 — pF
Rev.O 2/10
hFE, DC CURRENT GAIN
LESHAN RADIO COMPANY, LTD.
LBC807-16LT1G,LBC807-25LT1G,LBC807-40LT1G S-LBC807-16LT1G,S-LBC807-25LT1G,S-LBC807-40LT1G
TYPICAL CHARACTERISTICS −LBC807−16LT1G
VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V)
500
400 150°C
300 25°C
200 −55°C
100
VCE = 1 V
1 IC/IB = 10
0.1
25°C
150°C −55°C
0 0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector Current
1
1.1 1.0 IC/IB = 10 0.9 0.8 0.7
−55°C 25°C
150°C
0.6
0.5
0.4
0.3 0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs. Collector Current
1
VBE(on), BASE−EMITTER VOLTAGE (V)
0.01 0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage vs. Collector Current
1.2
1.1 VCE = 5 V 1.0
0.9
−55°C
0.8 25°C 0.7
0.6 0.5 150°C
0.4
0.3 0.2
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Voltage vs. Collector Current
VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V)
Rev.O 3/10
θV, TEMPERATURE COEFFICIENTS (mV/°C) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
LESHAN RADIO COMPANY, LTD.
LBC807-16LT1G,LBC807-25LT1G,LBC807-40LT1G S-LBC807-16LT1G,S-LBC807-25LT1G,S-LBC807-40LT1G
TYPICAL CHARACTERISTICS − LBC807−16LT1G
-1.0 TJ = 25°C
-0.8
-0.6 IC = -500 mA
-0.4
IC = -300 mA -0.2 IC = -100 mA
IC = -10 mA 0
-0.01
-0.1
-1.0
-10
IB, BASE CURRENT (mA)
Figure 5. Saturation Region
-100
+1.0 qVC for VCE(sat)
0
-1.0
100 10
-2.0 qVB for VBE
-1.0 -10 -100 -1000 IC, COLLECTOR CURRENT
Figure 6. Temperature Coefficients
1.0 -0.1
Cib
-1.0 -10 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances
Cob -100
Rev.O 4/10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V)
500 150°C
400
300 25°C
200 −55°C
100
LESHAN RADIO COMPANY, LTD.
LBC807-16LT1G,LBC807-25LT1G,LBC807-40LT1G S-LBC807-16LT1G,S-LBC807-25LT1G,S-LBC807-40LT1G
TYPICAL CHARACTERISTICS − LBC807−25LT1G
VCE = 1 V
1 IC/IB = 10
150°C
25°C 0.1 −55°C
0 0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 8. DC Current Gain vs. Collector Current
1
1.1 1.0 IC/IB = 10 0.9 0.8 0.7
−55°C 25°C
150°C
0.6
0.5
0.4
0.3 0.2
0.0001
0.001
0.01
0.1
.