LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽCollector current capability IC = -500 mA. ...
LESHAN RADIO COMPANY, LTD.
General Purpose
Transistors
PNP Silicon
FEATURE
ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO(max) = -45 V. ƽGeneral purpose switching and amplification. ƽ
PNP complement: LBC807 Series. ƽ We declare that the material of product compliance with RoHS requirements. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBC807-16LT1G
5A1 3000/Tape&Reel
LBC807-16LT3G
5A1 10000/Tape&Reel
LBC807-25LT1G
5B1 3000/Tape&Reel
LBC807-25LT3G
5B1 10000/Tape&Reel
LBC807-40LT1G
5C1 3000/Tape&Reel
LBC807-40LT3G
5C1 10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value –45 –50 –5.0 –500
Unit V V V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol PD
R θJA PD
R θJA T J , T stg
Max Unit
225 mW 1.8 mW/°C
556 °C/W
30...