LMBT5087LT1G

LESHAN RADIO COMPANY, LTD. Low Noise Transistor PNP Silicon We declare that the material of product compliance with RoHS requirements. LMBT5087LT1G ORDERING INFORMATION Device Marking Shipping LMBT5087LT1G 2Q 3000/Tape & Reel LMBT5087LT3G 2Q 10000/Tape & Reel MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous DEVICE MARKING Symbol V CEO V CBO V EBO IC LMBT5087LT1G =2Q THERMAL CHARACTERISTICS Characteristic Total Device Dissipation RF-5 Board (1) T A =25 °C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Value – 50 – 50 – 3.0 – 50 Unit Vdc Vdc Vdc mAdc Symbol PD R θJA PD R θJA T J , T stg Max 225 1.8 556 300 2.4 417 –55to+150 3 1 2 SOT– 23 (TO–236AB) 1 BASE 3 COLLECTOR 2 EMITTER Unit mW mW/°C °C/W mW mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –100 µAdc, I E = 0) V (BR)CEO V (BR)CBO Collector Cutoff Current I CBO (V CB = –10 Vdc, I E= 0) (V CB = –35 Vdc, I E= 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Min – 50 – 50 — — Max — — –10 –50 Unit Vdc Vdc n Adc 1/7 LESHAN RADIO COMPANY, LTD. LMBT...