DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP32N055HDE, NP32N055IDE, NP32N055SDE
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPT...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
NP32N055HDE, NP32N055IDE, NP32N055SDE
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-channel MOS Field Effect
Transistor designed for high current switching applications.
FEATURES
Channel temperature 175 degree rated Super low on-state resistance
RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A) Low Ciss : Ciss = 1300 pF TYP.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP32N055HDE NP32N055IDE Note
TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z
NP32N055SDE
Note Not for new design.
TO-252 (JEDEC) / MP-3ZK
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
ID(DC)
±32
Drain Current (pulse) Note1
ID(pulse)
±100
Total Power Dissipation (TC = 25°C)
PT1
66
Total Power Dissipation (TA = 25°C)
PT2
1.2
Channel Temperature
Tch 175
Storage Temperature
Tstg –55 to +175
Single Avalanche Current Note2
IAS 28 / 21 / 8
Single Avalanche Energy Note2
EAS 7.8 / 44 / 64
V V A A W W °C °C A mJ
(TO-251) (TO-252)
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance
Rth(ch-C) Rth(ch-A)
2.27 °C/W 125 °C/W
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