Document
RJK0851DPB
80V, 20A, 23m max. Silicon N Channel Power MOS FET Power Switching
Preliminary Datasheet
R07DS0079EJ0200 Rev.2.00
Apr 09, 2013
Functions
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting
Low on-resistance
RDS(on) = 18 m typ. (at VGS = 10 V) Pb-free Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 1 234
5 D
4 1, 2, 3 Source G 4 Gate
5 Drain
SSS 123
Application
Switching Mode Power Supply
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50 3. Tc = 25C
Symbol
VDSS VGSS
ID ID(pulse)Note1
IDR IAP Note 2 EAS Note 2 Pch Note3
ch-C
Tch
Tstg
Ratings 80 20 20 80 20 10 13.3 45 2.78 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W
C/W C C
This product is for the low voltage drive ( 10V). If the driving voltage is over 10 V under normal conditions, please use the product for high gate to source cutoff voltage (VGS(off)) which characteristics has been improved.
R07DS0079EJ0200 Rev.2.00 Apr 09, 2013
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RJK0851DPB
Preliminary
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test
Symbol V(BR)DSS
IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on)
tr td(off)
tf VDF trr
Min 80 — — 1.2 — — — — — — — — — — — — — — — —
Typ — — — — 18 20 36 2050 214 82 0.7 14 7.1 3.6 8.8 4.1 42 5.7 0.83 34
Max — 0.1 1 2.5 23 28 — — — — — — — — — — — — 1.1 —
Unit V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns
(Ta = 25°C)
Test Conditions ID = 10 mA, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 80 V, VGS = 0 V VDS = 10 V, ID = 1 mA ID = 10 A, VGS = 10 V Note4 ID = 10 A, VGS = 4.5 V Note4 ID = 10 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0 V, f = 1 MHz
VDD = 25 V, VGS = 4.5 V, ID = 20 A
VGS = 10 V, ID = 10 A, VDD 30 V, RL = 3 , Rg = 4.7
IF = 20 A, VGS = 0 V Note4 IF = 20 A, VGS = 0 V diF/ dt = 100 A/ s
R07DS0079EJ0200 Rev.2.00 Apr 09, 2013
Page 2 of 6
Channel Dissipation Pch (W)
RJK0851DPB
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
Drain Current ID (A)
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
50 3.2 V
40 3.0 V 4.5 V, 10 V
30
2.8 V 20
10 VGS = 2.6 V
Pulse Test 0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
1000
Pulse Test
800
600
400 ID = 20 A
200 10 A 5A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage VDS (on) (mV)
R07DS0079EJ0200 Rev.2.00 Apr 09, 2013
Drain to Source on State Resistance RDS (on) (mΩ)
Drain Current ID (A)
Drain Current ID (A)
Preliminary
Maximum Safe Operation Area
1000 Tc = 25°C 1 shot Pulse
100
10 μs
100 μs
10 1 ms
PW = 10 ms 1
Operation in DC Operation this area is 0.1 limited by RDS(on)
0.01 0.1
1
10 100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50 VDS = 10 V Pulse Test
40
30
20
10 25°C Tc = 75°C –25°C
0
12
34
5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance vs. Drain Current
1000 Pulse Test
100
VGS = 4.5 V 10 V
10
1 0.1 1 10 100
Drain Current ID (A)
Page 3 of 6
Static Drain to Source on State Resistance RDS (on) (mΩ)
RJK0851DPB
Static Drain to Source on State Resistance vs. Temperature
50
Pulse Test ID = 10 A
40
30 VGS = 4.5 V
20 10 V
10
0 –25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
200 ID = 20 A
160 VDD = 50 V 25 V 10 V
120
20 VGS
16
12
80 VDS
40
0 0 10
VDD = 50 V 25 V 10 V
20 30
40
Gate Charge Qg (nC)
8
4
0 50
Maximum Avalanche Energy vs. Channel Temperature Derating
20 IAP = 10 A VDD = 50 V
16 duty < 0.1 % Rg ≥ 50 Ω
12
8
4
0 25 50 75 100 125 150
Channel Temperature Tch (°C)
Avalanche Energy EAS (mJ)
Gate to Source Voltage VGS (V) Reverse Drain Current IDR (A)
Capacitance C (pF)
Preliminary
10000 1000
Typical Capacitance vs. Drain to Source Voltage
Ciss
Coss 100
Crss VGS = 0 V f = 1 MHz 10 0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Reverse Drain Current vs. Source to Drain Voltage
50 Pulse Test
40 10 V
30 5V
20
10 VGS = 0 V
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
R07DS0079EJ0200 Rev.2.00 Apr 09, 2013
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RJK0851DPB
Preliminary
Normalized Transient Therma.