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RJK0851DPB Dataheets PDF



Part Number RJK0851DPB
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N Channel Power MOS FET
Datasheet RJK0851DPB DatasheetRJK0851DPB Datasheet (PDF)

RJK0851DPB 80V, 20A, 23m max. Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet R07DS0079EJ0200 Rev.2.00 Apr 09, 2013 Functions  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 18 m typ. (at VGS = 10 V)  Pb-free  Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 5 D 4 1, 2, 3 Source G 4 Gate 5 Drain SSS 123 Application  Switching Mode Power Supply Abs.

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RJK0851DPB 80V, 20A, 23m max. Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet R07DS0079EJ0200 Rev.2.00 Apr 09, 2013 Functions  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 18 m typ. (at VGS = 10 V)  Pb-free  Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 5 D 4 1, 2, 3 Source G 4 Gate 5 Drain SSS 123 Application  Switching Mode Power Supply Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAS Note 2 Pch Note3 ch-C Tch Tstg Ratings 80 20 20 80 20 10 13.3 45 2.78 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W C/W C C This product is for the low voltage drive ( 10V). If the driving voltage is over 10 V under normal conditions, please use the product for high gate to source cutoff voltage (VGS(off)) which characteristics has been improved. R07DS0079EJ0200 Rev.2.00 Apr 09, 2013 Page 1 of 6 RJK0851DPB Preliminary Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 80 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 18 20 36 2050 214 82 0.7 14 7.1 3.6 8.8 4.1 42 5.7 0.83 34 Max — 0.1 1 2.5 23 28 — — — — — — — — — — — — 1.1 — Unit V A A V m m S pF pF pF  nC nC nC ns ns ns ns V ns (Ta = 25°C) Test Conditions ID = 10 mA, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 80 V, VGS = 0 V VDS = 10 V, ID = 1 mA ID = 10 A, VGS = 10 V Note4 ID = 10 A, VGS = 4.5 V Note4 ID = 10 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 25 V, VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 10 A, VDD  30 V, RL = 3 , Rg = 4.7  IF = 20 A, VGS = 0 V Note4 IF = 20 A, VGS = 0 V diF/ dt = 100 A/ s R07DS0079EJ0200 Rev.2.00 Apr 09, 2013 Page 2 of 6 Channel Dissipation Pch (W) RJK0851DPB Main Characteristics Power vs. Temperature Derating 80 60 40 20 Drain Current ID (A) 0 50 100 150 200 Case Temperature Tc (°C) Typical Output Characteristics 50 3.2 V 40 3.0 V 4.5 V, 10 V 30 2.8 V 20 10 VGS = 2.6 V Pulse Test 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 1000 Pulse Test 800 600 400 ID = 20 A 200 10 A 5A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage VDS (on) (mV) R07DS0079EJ0200 Rev.2.00 Apr 09, 2013 Drain to Source on State Resistance RDS (on) (mΩ) Drain Current ID (A) Drain Current ID (A) Preliminary Maximum Safe Operation Area 1000 Tc = 25°C 1 shot Pulse 100 10 μs 100 μs 10 1 ms PW = 10 ms 1 Operation in DC Operation this area is 0.1 limited by RDS(on) 0.01 0.1 1 10 100 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 50 VDS = 10 V Pulse Test 40 30 20 10 25°C Tc = 75°C –25°C 0 12 34 5 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 1000 Pulse Test 100 VGS = 4.5 V 10 V 10 1 0.1 1 10 100 Drain Current ID (A) Page 3 of 6 Static Drain to Source on State Resistance RDS (on) (mΩ) RJK0851DPB Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test ID = 10 A 40 30 VGS = 4.5 V 20 10 V 10 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Dynamic Input Characteristics 200 ID = 20 A 160 VDD = 50 V 25 V 10 V 120 20 VGS 16 12 80 VDS 40 0 0 10 VDD = 50 V 25 V 10 V 20 30 40 Gate Charge Qg (nC) 8 4 0 50 Maximum Avalanche Energy vs. Channel Temperature Derating 20 IAP = 10 A VDD = 50 V 16 duty < 0.1 % Rg ≥ 50 Ω 12 8 4 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Avalanche Energy EAS (mJ) Gate to Source Voltage VGS (V) Reverse Drain Current IDR (A) Capacitance C (pF) Preliminary 10000 1000 Typical Capacitance vs. Drain to Source Voltage Ciss Coss 100 Crss VGS = 0 V f = 1 MHz 10 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage 50 Pulse Test 40 10 V 30 5V 20 10 VGS = 0 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) R07DS0079EJ0200 Rev.2.00 Apr 09, 2013 Page 4 of 6 RJK0851DPB Preliminary Normalized Transient Therma.


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