NP23N06YDG

NP23N06YDG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0014EJ0100 Rev.1.00 Jul 01, 2010 Description The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance ⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A) Low Ciss: Ciss = 1200 pF TYP. (VDS = 25 V, VGS = 0 V) Logic level drive type Designed for automotive application and AEC-Q101 qualified Small size package 8-pin HSON Ordering Information Part No. NP23N06YDG -E1-AY ∗1 NP23N06YDG -E2-AY ∗1 LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Package 8-pin HSON, Taping (E1 type) 8-pin HSON, Taping (E2 type) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) ∗2 Channel Temperature Storage Temperature Repetitive Avalanche Current ∗3 Repetitive Avalanche Energy ∗3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 60 ±20 ±23 ±46 60 1.0 175 −55 to +175 11 12 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Rth(ch-C) 2.5 °C/W Channel to Ambient Thermal Resistance ∗2 Rth(ch-A) 150 °C/W Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt ...