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CMP3205 Dataheets PDF



Part Number CMP3205
Manufacturers Cmos
Logo Cmos
Description N-Ch 60V Fast Switching MOSFETs
Datasheet CMP3205 DatasheetCMP3205 Datasheet (PDF)

CMP3205 N-Ch 60V Fast Switching MOSFETs General Description Product Summery TheCMP3205 is a N-channel Power MOSFET. It has specifically been designed to minimize input capacitance and gate charge. The device is therefore suitable in advanced high-efficiency switching applications. Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Absolute Maximum Ratings BVDSS 60V RDSON 8.0m ID 100A .

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CMP3205 N-Ch 60V Fast Switching MOSFETs General Description Product Summery TheCMP3205 is a N-channel Power MOSFET. It has specifically been designed to minimize input capacitance and gate charge. The device is therefore suitable in advanced high-efficiency switching applications. Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Absolute Maximum Ratings BVDSS 60V RDSON 8.0m ID 100A Applications LED POWER CONTROLLER DC-DC & DC-AC CONVERTERS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS TO220 Pin Configuration G DS TO-220 (CMP3205) Symbol VDS VGS ID@TC=25 ID@TC=100 IDM EAS IAS PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Sou ce Voltage Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 60 20 100 68 300 600 62 190 -55 to 175 -55 to 175 Units V V A A A mJ A W Thermal Data Symbol R JA R JC Parameter Thermal Resistance Junction-ambient1 Thermal Resistance Junction-case Typ. ----- Max. 62.5 0.79 Unit /W /W 1 CMP3205 N-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 , unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage BVDSS TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage IDSS Drain-Source Leakage Current IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Conditions Min. VGS=0V , ID=250uA Reference to 25 , ID=1mA 60 --- VGS=10V , ID=62A --- VGS=VDS , ID =250uA 2 VDS=Max rating, VGS=0V VDS=Max rating , VGS=0V @125℃ ----- VGS 20V , VDS=0V --- VDS=25V , ID=62A --- VDS=0V , VGS=0V , f=1MHz --- ID = 62A VDS =48V VGS =10 V ------- V DS =30V ID = 62A R G=4.7Ω�,V GS =10V --------- --- VDS=25V , VGS=0V , f=1MHz --- --- Typ. --- 0.057 7.8 3 ------42 3.3 71 16 28 16 57 85 71 2422 522 166 Max. ----8.0 4 1 10 100 ------------------------- Unit V V/ m V uA nA S nC ns pF Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current1 Pulsed Source Current2 Diode Forward Voltage2 Conditions VG=VD=0V , Force Current VGS=0V , IS=62A , TJ=25 Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width 300us , duty cycle 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=62A Min. ------- Typ. ------- Max. 100 300 1.5 Unit A A V 2 .


MIP2E3DMS CMP3205 Z5823


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