Document
CMP3205
N-Ch 60V Fast Switching MOSFETs
General Description
Product Summery
TheCMP3205 is a N-channel Power MOSFET. It has specifically been designed to minimize input capacitance and gate charge. The device is therefore suitable in advanced high-efficiency switching applications.
Features
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free
Absolute Maximum Ratings
BVDSS 60V
RDSON 8.0m
ID 100A
Applications
LED POWER CONTROLLER DC-DC & DC-AC CONVERTERS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS
TO220 Pin Configuration
G DS
TO-220
(CMP3205)
Symbol VDS VGS
ID@TC=25 ID@TC=100
IDM EAS IAS PD@TC=25 TSTG
TJ
Parameter Drain-Source Voltage Gate-Sou ce Voltage Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating 60 20 100 68 300 600 62 190
-55 to 175 -55 to 175
Units V V A A A mJ A W
Thermal Data
Symbol R JA R JC
Parameter Thermal Resistance Junction-ambient1 Thermal Resistance Junction-case
Typ. -----
Max. 62.5 0.79
Unit /W /W
1
CMP3205
N-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage BVDSS TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
IDSS Drain-Source Leakage Current
IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Conditions
Min.
VGS=0V , ID=250uA Reference to 25 , ID=1mA
60 ---
VGS=10V , ID=62A
---
VGS=VDS , ID =250uA
2
VDS=Max rating, VGS=0V VDS=Max rating , VGS=0V @125℃
-----
VGS 20V , VDS=0V
---
VDS=25V , ID=62A
---
VDS=0V , VGS=0V , f=1MHz
---
ID = 62A VDS =48V VGS =10 V
-------
V DS =30V
ID = 62A R G=4.7Ω�,V GS =10V
---------
---
VDS=25V , VGS=0V , f=1MHz
---
---
Typ. ---
0.057 7.8 3 ------42 3.3 71 16 28 16 57 85 71
2422 522 166
Max. ----8.0 4 1 10 100 -------------------------
Unit V
V/ m
V uA nA S
nC
ns
pF
Diode Characteristics
Symbol IS ISM VSD
Parameter Continuous Source Current1 Pulsed Source Current2 Diode Forward Voltage2
Conditions VG=VD=0V , Force Current VGS=0V , IS=62A , TJ=25
Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width 300us , duty cycle 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=62A
Min. -------
Typ. -------
Max. 100 300 1.5
Unit A A V
2
.