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2SA1955FV Dataheets PDF



Part Number 2SA1955FV
Manufacturers Toshiba
Logo Toshiba
Description Silicon PNP Transistor
Datasheet 2SA1955FV Datasheet2SA1955FV Datasheet (PDF)

2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1955FV General Purpose Amplifier Applications Switching and Muting Switch Application • Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA • Large collector current: IC = −400 mA (max) Absolute Maximum Ratings (Ta = 25°C) 1.2±0.05 0.8±0.05 0.4 0.4 0.22±0.05 Unit: mm 1.2±0.05 0.8±0.05 1 23 0.32±0.05 Characteristics Symbol Rating Unit 0.13±0.05 0.5±0.05 Collector-base voltage Collector.

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2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1955FV General Purpose Amplifier Applications Switching and Muting Switch Application • Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA • Large collector current: IC = −400 mA (max) Absolute Maximum Ratings (Ta = 25°C) 1.2±0.05 0.8±0.05 0.4 0.4 0.22±0.05 Unit: mm 1.2±0.05 0.8±0.05 1 23 0.32±0.05 Characteristics Symbol Rating Unit 0.13±0.05 0.5±0.05 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −15 −12 −5 −400 −50 150 * 150 −55~150 V V V mA mA mW °C °C VESM JEDEC JEITA 1.BASE 2.EMITTER 3.COLLECTOR ― ― Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-1L1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 1.5 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt) 0.5mm 0.45mm 0.45mm 0.4mm Marking 1 2007-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Collector-emitter on resistance Symbol Test Condition ICBO VCB = −15 V, IE = 0 IEBO VEB = −5 V, IC = 0 hFE (Note) VCE = −2 V, IC = −10 mA VCE (sat) (1) VCE (sat) (2) VBE (sat) IC = −10 mA, IB = −0.5 mA IC = −200 mA, IB = −10 mA IC = −200 mA, IB = −10 mA fT VCE = −2 V, IC = −10 mA Cob VCB = −10 V, IE = 0, f = 1 MHz Ron IB = −1 mA, Vin = −1 Vrms, f = 1 kHz Turn-on time ton 2SA1955FV Min Typ. Max Unit ⎯ ⎯ −0.1 μA ⎯ ⎯ −0.1 μA 300 ⎯ 1000 ⎯ −15 −30 mV ⎯ −110 −250 ⎯ −0.87 −1.2 V 80 130 ⎯ MHz ⎯ 4.2 ⎯ pF ⎯ 0.9 ⎯ Ω ⎯ 40 ⎯ Switching time Storage time tstg ⎯ 280 ⎯ ns Fall time tf IB1 = −IB2 = 5 mA Note: hFE classification A: 300~600, B: 500~1000 ⎯ 45 ⎯ 2 2007-11-01 2SA1955FV 3 2007-11-01 COLLECTOR POWER DISSIPATION PC (mW) PC – Ta 200 Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mmt) 150 100 50 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta (°C) 2SA1955FV 4 2007-11-01 2SA1955FV RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted .


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