HEXFET Power MOSFET
APPROVED
PD - TBD
AUTOMOTIVE MOSFET
Features
lAdvanced Process Technology lUltra Low On-Resistance l175°C Operating T...
Description
APPROVED
PD - TBD
AUTOMOTIVE MOSFET
Features
lAdvanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
G
Absolute Maximum Ratings
Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÃIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Reflow Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
jRθJC ijRθJA jRθJA
Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
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