DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2810
SWITCHING P-CHANNEL POWER MOSFET
DESCRIPTION The μ PA2810 is P-channel ...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
μ PA2810
SWITCHING P-CHANNEL POWER MOSFET
DESCRIPTION The μ PA2810 is P-channel MOSFET designed for DC/DC converter and power management applications of portable equipments.
FEATURES Low on-state resistance
RDS(on)1 = 12 mΩ MAX. (VGS = −10 V, ID = −13 A) RDS(on)2 = 23 mΩ MAX. (VGS = −4.5 V, ID = −6.5 A) Built-in gate protection diode Thin type surface mount package with heat spreader RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS −30 V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation Note2 Total Power Dissipation (PW = 10 sec) Note2
VGSS ID(DC) ID(pulse) PT1 PT2
m20 m13 m78 1.5
3.8
V A A W W
Channel Temperature
Tch 150 °C
Storage Temperature Single Avalanche Current Note3 Single Avalanche Energy Note3
Tstg
−55 to +150
°C
IAS −13 A
EAS
16.9
mJ
PACKAGE DRAWING (Unit: mm)
0.65
+0.050 –0
0.22±0.05 0.9±0.05
0.32±0.05 0.10 M
1 2
8 7
36
5 4
3.3±0.15
3.0±0.1
3.3±0.15 3.15±0.1
0.10 S
0.35 0.2
1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain
2.34±0.1
0.4±0.1
0.4±0.1 1.75±0.1
EQUIVALENT CIRCUIT
Drain
THERMAL RESISTANCE Channel to Ambient Thermal Resistance Note2
Channel to Case (Drain) Thermal Resistance
Rth(ch-A) Rth(ch-C)
83.3 2.4
°C/W °C/W
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt 3. Starting Tch = 25°C, VDD = −15 V, RG ...
