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2SB989

Silicon PNP Power Transistor

Description

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1.7V(Max)@ (IC= -3A, IB= -0.3A) ·Complement to Type 2SD1352 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS...

INCHANGE

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