B3965D

B3965D N- and P-Channel 40-V (D-S) MOSFET General Description The B3965D is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits with high-side switching, and low in-line power loss are needed in a very small outline surface mount package. Pin Configuration Features 40V/5.2A, RDS(ON)=40mΩ@VGS=10V (N-Ch) 40V/4.9A, RDS(ON)=45mΩ@VGS=4.5V (N-Ch) -40V/-4.5A, RDS(ON)=54mΩ@VGS=-10V (P-Ch) -40V/-3.9A, RDS(ON)=72mΩ@VGS=-4.5V (P-Ch) Super High Density Cell Design For Extremely Low RDS(ON) Exceptional On-Resistance and Maximum DC Current Capability TO-252 Package Applications Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch LCD Display inverter ℃Absolute Maximum Ratings (TA=25 Unless Otherwise Noted): Parameter Drain-Source Voltage Gate-Source Voltage ℃Continuous Drain Current(tJ=150 ) ℃TA=25 ℃TA=70 Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Energy with Single Pulse(L=0.1mH) ℃TA=25 Maximum Power Dissipation ℃TA=70 Operating Junction Temperature Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case Symbol VDSS VGSS ID IDM IS EAS PD TJ RθJA RθJC...