B4953

B4953 Dual P-Channel 30V (D-S) MOSFET General Description The B4953 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. Pin Configuration Features -30V/-5.3A, RDS(ON)=60mΩ@VGS=-10V -30V/-4.2A, RDS(ON)=90mΩ@VGS=-4.5V Super High Density Cell Design for Extremely Low RDS(ON) Exceptional On-Resistance and Maximum DC Current Capability SOP-8 Package Applications Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter ℃Absolute Maximum Ratings (TA=25 Unless Otherwise Noted): Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage ℃Continuous Drain Current(tJ=150 ) ℃TA=25 ℃TA=70 VDSS VGSS ID -30 ±20 -5.3 -4.3 Pulsed Drain Current Continuous Source Current (Diode Conduction) ℃TA=25 Maximum Power Dissipation ℃TA=70 IDM IS PD -30 -1.7 2.0 1.3 Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case TJ Tstg RθJA RθJC -55 to 150 -55 to 150 ≦T 10 sec Steady State 45 47 75 Unit V V A...