LESHAN RADIO COMPANY, LTD.
VHF/UHF Transistors
z We declare that the material of product compliance with RoHS requirem...
LESHAN RADIO COMPANY, LTD.
VHF/UHF
Transistors
z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Ordering Information
Device
LMBTH10QLT1G S-LMBTH10QLT1G
LMBTH10QLT3G S-LMBTH10QLT3G
Marking 3EQ 3EQ
Shipping 3000/Tape&Reel 10000/Tape&Reel
MAXIMUM RATINGS Rating
Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage
Symbol V CEO V CBO V EBO
Value 25 30 3.0
Unit Vdc Vdc Vdc
LMBTH10QLT1G S-LMBTH10QLT1G
3
1 2
SOT–23
3 COLLECTOR
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol PD
RθJA PD
RθJA TJ , Tstg
Max Unit
225 mW 1.8 mW/°C 556 °C/W
300 mW 2.4 mW/°C
417 –55 to +150
°C/W °C
DEVICE MARKING
(S-)LMBTH10LT1G = 3EQ
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I C = 1.0 mAdc, I B= 0 ) Collector–Base Breakdown Voltage (I C = 100 µAdc , I E = 0) Emitter–Base Breakdown Voltage (I E = 10 µAdc , I C= 0) Collector Cutoff Current ( V CB = 25Vdc , I E = 0 ) Collector Cutoff Current ( V CB = 30Vdc , I E = 0 ) Emitter Cutoff Current ( V...