Document
LESHAN RADIO COMPANY, LTD.
Medium Power Transistor (32V, 0.8A) L2SD1781KQLT1G
L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series
FFeatures 1) Very low VCE(sat).
VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G
4) We declare that the material of product compliance with RoHS requirements.
5) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
3
1 2
SOT-23 /TO-236AB
FStructure Epitaxial planar type NPN silicon transistor
FAbsolute maximum ratings (Ta = 25_C)
COLLECTOR 3
1 BASE
2 EMITTER
ORDERING INFORMATION
Device
L2SD1781KQLT1G S-L2SD1781KQLT1G L2SD1781KQLT3G S-L2SD1781KQLT3G
L2SD1781KRLT1G S-L2SD1781KRLT1G L2SD1781KRLT3G S-L2SD1781KRLT3G
Marking
Shipping
AFQ 3000 Tape & Reel
AFQ 10000 Tape & Reel AFR 3000 Tape & Reel
AFR 10000 Tape & Reel
Rev.O 1/4
FElectrical characteristics (Ta = 25_C)
LESHAN RADIO COMPANY, LTD.
L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series
DEVICE MARKING
L2SD1781KQLT1G=AFQ L2S1781KRLT1G=AFR
ltem hFE
Q 120~270
R 180~390
Electrical characteristic curves
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series
A L
3 BS
12
VG
C
D
H K
0.037 0.95
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177 J K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
PIN 1. BASE 2. EMITTER 3. COLLECTOR
0.037 0.95
0.035 0.9
0.079 2.0
0.031 0.8
inches mm
Rev.O 4/4
.