LMBT6517LT1G

LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. Ordering Information Device LMBT6 517LT1G S-LMBT6 517LT1G LMBT6517LT3G S-LMBT6517LT3G Marking 1Z 1Z Shipping 3000/Tape&Reel 10000/Tape&Reel LMBT6517LT1G S-LMBT6517LT1G 1 2 3 MAXIMUM RATINGS SOT–23 Rating Symbol Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Base Current IB Collector Current — Continuous I C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING (S-)LMBT6517LT1 G= 1Z Value 350 350 5.0 250 500 Unit Vdc Vdc Vdc mAdc mAdc 1 BASE Symbol PD RθJA PD RθJA TJ , Tstg Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 417 –55 to +150 mW/°C °C/W °C 3 COLLECTOR 2 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 1.0 mAdc ) Collector–Base Breakdown Voltage (I C = 100 µAdc ) Emitter–Base Breakdown Voltage (I E = 10 µAdc ) Collector Cutoff Current ( V CB = 250Vdc ) Emitter Cutoff Current ( V EB = 5.0Vdc ) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CEO V (BR...