Document
VHF / UFH Transistor
NPN Silicon
LESHAN RADIO COMPANY, LTD.
z We declare that the material of product compliance with RoHS requirements.
Ordering Information
LMBT918LT1G S-LMBT918LT1G
Device
LMBT918LT1G S-LMBT918LT1G
LMBT918LT3G S-LMBT918LT3G
Marking M3B M3B
Shipping 3000/Tape&Reel 10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous
V CEO V CBO V EBO
IC
Value 15 30 3.0 50
Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol
Max Unit
PD 225 mW
RθJA PD
RθJA TJ , Tstg
556 °C/W
300 mW 2.4 mW/°C
417 –55 to +150
°C/W °C
3
1 2
CASE 318–08, STYLE 6 SOT–23 (TO–236AB)
1 BASE
3 COLLECTOR
2 EMITTER
DEVICE MARKING
LMBT9181LT1G = M3B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I C = 3.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = 1.0 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Collector Cutoff Current ( V CB = 15 Vdc, I E = 0)
V (BR)CEO V (BR)CBO V (BR)EBO
I CBO
15 30 3.0 —
1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max Unit
— Vdc — Vdc — Vdc 50 nAdc
Rev.O 1/3
LESHAN RADIO COMPANY, LTD. LMBT918LT1G , S-LMBT918LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain (I C = 3.0 mAdc, V CE = 1.0 Vdc) Collector–Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) Base–Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc)
hFE VCE(sat) V BE(sat)
Min
20 –– —
Max
–– 0.4 1.0
SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = 4.0 mAdc, V CE = 10 Vdc, f = 100 MHz) Output Capacitance (V CB = 0 Vdc, I E = 0, f = 1.0 MHz) (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Noise Figure (I C = 1.0 mAdc, V CE = 6.0 Vdc, R S = 50 Ω, f = 60 MHz) (Figure 1) Power Output (I C = 8.0 mAdc, V CB = 15 Vdc, f = 500 MHz) Common–Emitter Amplifier Power Gain (I C = 6.0 mAdc, V CB = 12 Vdc, f = 200 MHz)
V BB
EXTERNAL 100 k
fT C obo
C ibo NF P out G pe V CC
600 —
— 3.0 — 1.7 — 2.0 — 6.0 30 — 11 —
1000 pF BYPASS
Unit –– Vdc Vdc
MHz pF
pF dB mW dB
0.018 µF 0.018 µF
C 3G
0.018 µF 50 Ω
0.018 µF
NF TEST CONDITIONS
I C = 1.0 mA V CE = 6.0 VOLTS R S = 50 Ω f = 60 MHz
G pe TEST CONDITIONS I C = 6.0 mA V CE = 12 VOLTS f = 200 MHz
Figure 1. NF, G pe Measurement Circuit 20–200
RF VM
Rev.O 2/3
LESHAN RADIO COMPANY, LTD. LMBT918LT1G , S-LMBT918LT1G
A L
3 BS
12
VG
C
D
H K
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
J L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
0.037 0.95
0.035 0.9
0.037 0.95
0.079 2.0
0.031 0.8
inches mm
Rev.O 3/3
.