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LMBT918LT3G Dataheets PDF



Part Number LMBT918LT3G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description VHF / UFH Transistor
Datasheet LMBT918LT3G DatasheetLMBT918LT3G Datasheet (PDF)

VHF / UFH Transistor NPN Silicon LESHAN RADIO COMPANY, LTD. z We declare that the material of product compliance with RoHS requirements. Ordering Information LMBT918LT1G S-LMBT918LT1G Device LMBT918LT1G S-LMBT918LT1G LMBT918LT3G S-LMBT918LT3G Marking M3B M3B Shipping 3000/Tape&Reel 10000/Tape&Reel MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous V CEO V CBO V EBO IC Value 15 30 3.0 50 Unit Vdc Vdc Vdc .

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VHF / UFH Transistor NPN Silicon LESHAN RADIO COMPANY, LTD. z We declare that the material of product compliance with RoHS requirements. Ordering Information LMBT918LT1G S-LMBT918LT1G Device LMBT918LT1G S-LMBT918LT1G LMBT918LT3G S-LMBT918LT3G Marking M3B M3B Shipping 3000/Tape&Reel 10000/Tape&Reel MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous V CEO V CBO V EBO IC Value 15 30 3.0 50 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW RθJA PD RθJA TJ , Tstg 556 °C/W 300 mW 2.4 mW/°C 417 –55 to +150 °C/W °C 3 1 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) 1 BASE 3 COLLECTOR 2 EMITTER DEVICE MARKING LMBT9181LT1G = M3B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 3.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = 1.0 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Collector Cutoff Current ( V CB = 15 Vdc, I E = 0) V (BR)CEO V (BR)CBO V (BR)EBO I CBO 15 30 3.0 — 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Max Unit — Vdc — Vdc — Vdc 50 nAdc Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LMBT918LT1G , S-LMBT918LT1G ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol ON CHARACTERISTICS DC Current Gain (I C = 3.0 mAdc, V CE = 1.0 Vdc) Collector–Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) Base–Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) hFE VCE(sat) V BE(sat) Min 20 –– — Max –– 0.4 1.0 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = 4.0 mAdc, V CE = 10 Vdc, f = 100 MHz) Output Capacitance (V CB = 0 Vdc, I E = 0, f = 1.0 MHz) (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Noise Figure (I C = 1.0 mAdc, V CE = 6.0 Vdc, R S = 50 Ω, f = 60 MHz) (Figure 1) Power Output (I C = 8.0 mAdc, V CB = 15 Vdc, f = 500 MHz) Common–Emitter Amplifier Power Gain (I C = 6.0 mAdc, V CB = 12 Vdc, f = 200 MHz) V BB EXTERNAL 100 k fT C obo C ibo NF P out G pe V CC 600 — — 3.0 — 1.7 — 2.0 — 6.0 30 — 11 — 1000 pF BYPASS Unit –– Vdc Vdc MHz pF pF dB mW dB 0.018 µF 0.018 µF C 3G 0.018 µF 50 Ω 0.018 µF NF TEST CONDITIONS I C = 1.0 mA V CE = 6.0 VOLTS R S = 50 Ω f = 60 MHz G pe TEST CONDITIONS I C = 6.0 mA V CE = 12 VOLTS f = 200 MHz Figure 1. NF, G pe Measurement Circuit 20–200 RF VM Rev.O 2/3 LESHAN RADIO COMPANY, LTD. LMBT918LT1G , S-LMBT918LT1G A L 3 BS 12 VG C D H K SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 J L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 0.037 0.95 0.035 0.9 0.037 0.95 0.079 2.0 0.031 0.8 inches mm Rev.O 3/3 .


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