LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽCollector current capability IC = -500 mA...
LESHAN RADIO COMPANY, LTD.
General Purpose
Transistors
PNP Silicon
FEATURE
ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO(max) = -45 V. ƽGeneral purpose switching and amplification. ƽ
PNP complement: LBC807 Series. ƽWe declare that the material of product compliance with RoHS requirements. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC807-16WT1G S-LBC807-16WT1G
3
DEVICE MARKING AND ORDERING INFORMATION
1 2
Device LBC807-16WT1G S-LBC807-16WT1G
LBC807-16WT3G S-LBC807-16WT3G
Marking 5A 5A
Shipping 3000/Tape&Reel 10000/Tape&Reel
SC-70
3 COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value –45 –50 –5.0 –500
Unit V V V
mAdc
1 BASE
2 EMITTER
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board (1)
T A =25 °C Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C
Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol PD
R θJA PD
R θJA T J , Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max 150
1.2 833 200
1.6 625 –55to+150
Unit mW
mW/°C °C/W mW
mW/°C °C/W
°C
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LBC807-16WT1G S-LBC807-16WT1G
ELECTRICAL CHARACTERIST...