LBC817-25WT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon ●FEATURES 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ●DEVICE MARKING AND ORDERING INFORMATION Device LBC817-25WT1G LBC817-25WT3G Marking 6B 6B Shipping 3000/Tape&Reel 10000/Tape&Reel ●MAXIMUM RATINGS(Ta = 25℃) Parameter Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Limits 45 50 5.0 500 LBC817-25WT1G S-LBC817-25WT1G 3 Unit Vdc Vdc Vdc mAdc 1 2 SC-70 1 BASE 3 COLLECTOR 2 EMITTER ●THERMAL CHARACTERISTICS Parameter Symbol Total Power Dissipation FR-5 PD Board,(Note 1.)@Ta = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient RθJA Total Power Dissipation Alumina PD Substrate,(Note 2.)@Ta = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient RθJA Junction and Storage Temperature Range TJ, Tstg 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Limits 150 1.2 833 200 1.6 625 –55 to +150 Unit mW °C/W °C/W mW °C/W °C/W °C July , 2015 Rev .A 1/5 LESHAN RADIO COMPANY, LTD. LBC817-25WT1G,S-LBC817-25WT1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) Characteristic Collector–Emitter Breakdown Voltage (IC = 10 mAdc, I B = 0) Collector–Emitter Breakdown Voltage (IC = 10 μA...