LMBTA56WT1G

LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LMBTA55WT1G LMBTA56WT1G S-LMBTA55WT1G S-LMBTA56WT1G MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C Value LMBTA55 LMBTA56 –60 –80 –60 –80 –4.0 –500 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θJA PD R θJA T J , T stg Max Unit 150 mW 1.2 mW/°C 833 °C/W 200 mW 1.6 625 –55 to +150 mW/°C °C/W °C 3 1 2 SC-70 1 BASE 3 COLLECTOR 2 EMITTER DEVICE MARKING (S-)LMBTA55WT1G = 2H; (S-)LMBTA56 WT1G = 2GM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (3) (I C = –1.0 mAdc, I B= 0 ) LMBTA55 LMBTA56 Emitter–Base Breakdown Voltage (I E = –100 µAdc, I C = 0 ) Collector Cutoff Current ( V CE = –60Vdc, I B = 0) Collector Cutoff Current ( V CB = –60Vdc, I E= 0) LMBTA55 ( V CB = –80Vdc, I E= 0) LMBTA56 1. FR–5 = 1.0 ...