LESHAN RADIO COMPANY, LTD.
Driver Transistors
PNP Silicon
We declare that the material of product compliance with RoHS ...
LESHAN RADIO COMPANY, LTD.
Driver
Transistors
PNP Silicon
We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LMBTA55WT1G LMBTA56WT1G
S-LMBTA55WT1G S-LMBTA56WT1G
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value LMBTA55 LMBTA56
–60 –80
–60 –80 –4.0
–500
Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol PD
R θJA PD
R θJA T J , T stg
Max Unit 150 mW
1.2 mW/°C 833 °C/W 200 mW
1.6 625 –55 to +150
mW/°C °C/W
°C
3
1
2
SC-70
1 BASE
3 COLLECTOR
2 EMITTER
DEVICE MARKING
(S-)LMBTA55WT1G = 2H; (S-)LMBTA56 WT1G = 2GM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3) (I C = –1.0 mAdc, I B= 0 )
LMBTA55 LMBTA56
Emitter–Base Breakdown Voltage
(I E = –100 µAdc, I C = 0 ) Collector Cutoff Current ( V CE = –60Vdc, I B = 0) Collector Cutoff Current ( V CB = –60Vdc, I E= 0)
LMBTA55
( V CB = –80Vdc, I E= 0)
LMBTA56
1. FR–5 = 1.0 ...