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L2SA812SLT1G Dataheets PDF



Part Number L2SA812SLT1G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description General Purpose Transistors
Datasheet L2SA812SLT1G DatasheetL2SA812SLT1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 ƽPb-Free Package is available. www.DataSheet4U.DcoEmVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L2SA812QLT1 M8 3000/Tape&Reel L2SA812QLT1G L2SA812RLT1 M8 (Pb-Free) M6 3000/Tape&Reel 3000/Tape&Reel L2SA812RLT1G L2SA812SLT1 M6 (Pb-Free) M7 3000/Tape&Reel 3000/Tape&Reel L2SA812SLT1G M7 (Pb-Free) MAXIMUM RATINGS 3000/Tape&R.

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 ƽPb-Free Package is available. www.DataSheet4U.DcoEmVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L2SA812QLT1 M8 3000/Tape&Reel L2SA812QLT1G L2SA812RLT1 M8 (Pb-Free) M6 3000/Tape&Reel 3000/Tape&Reel L2SA812RLT1G L2SA812SLT1 M6 (Pb-Free) M7 3000/Tape&Reel 3000/Tape&Reel L2SA812SLT1G M7 (Pb-Free) MAXIMUM RATINGS 3000/Tape&Reel Rating Symbol L2SA812 Unit Collector-Emitter Voltage VCEO -50 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -6 V Collector current-continuoun IC THERMAL CHARATEERISTICS -150 mAdc Characteristic Total Device Dissipation FR-5 Board, (1) TA=25oC Derate above 25oC Thermal Resistance, Junction to Ambient Symbol PD R θJA Max 200 1.8 556 Total Device Dissipation Alumina Substrate, (2) TA=25 oC Derate above 25oC Thermal Resistance, Junction to Ambient Junction and Storage Temperature PD R θJA Tj ,Tstg 200 2.4 417 -55 to +150 L2SA812*LT1 3 1 2 SOT-23 1 BASE 3 COLLECTOR 2 EMITTER Unit mW mW/oC oC/W mW mW/oC oC/W oC L2SA812-1/5 LESHAN RADIO COMPANY, LTD. L2SA812*LT1 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) Characteristic Symbol Min Typ Max OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC=-1mA) Emitter-Base Breakdown Voltage www.DataSheet4U.com (IE=-50 µΑ ) Collector-Base Breakdown Voltage (IC=-50 µA) Collector Cutoff Current (VCB=-50V) Emitter Cutoff Current (VBE=-6V) V(BR)CEO V(BR)EBO V(BR)CBO -50 -6 -60 ICBO IEBO - ---- - -0.1 -0.1 ON CHARACTERISTICS DC Current Gain (IC=-1mA,VCE=-6.0V) Collector-Emitter Saturation Voltage (IC=-100mA,IB=-10mA) Base -Emitter On Voltage IE=-1.0mA,VCE=-6.0V) hFE VCE(sat) VBE 120 -0.58 -0.18 -0.62 560 -0.3 -0.68 SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (VCE=-6.0V,IE =-10mA) Ft - 180 Output Capacitance(VCE = -10V, IE=0, f=1.0MHz) Cobo - 4.5 - hFE Values are classified as followes NOTE: * h FE Q 120~270 R 180~390 S 270~560 Unit V V V µA µA V V MHz pF L2SA812-2/5 LESHAN RADIO COMPANY, LTD. Fig.1 Grounded emitter propagation characteristics I C, COLLECTOR CURRENT (mA) –50 –20 –10 –50 www.DataSheet4U.com –2 –1 –0.5 T A = 100°C 25°C – 40°C V = –10 V CE –0.2 –0.1 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1.6 V BE , BASE TO EMITTER VOLTAGE(V) I C, COLLECTOR CURRENT (mA) Fig.3 Grounded emitter output characteristics( ) –100 T A = 25°C 500 –80 450 400 350 300 –60 –40 –20 –250 –200 –150 –100 –50 µA 0 I B =0 0 –1 –2 –3 –4 –5 V CE , COLLECTOR TO EMITTER VOLTAGE (V) Fig.5 DC current gain vs. collector current ( ) 500 T A = 100°C 25°C –40°C 200 100 h FE, DC CURRENT GAIN 50 –0.2 –0.5 –1 –2 VCE= – 6V –5 –10 –20 –50 –100 I , COLLECTOR CURRENT (mA) C I C, COLLECTOR CURRENT (mA) V , COLLECTOR SATURATION VOLTAGE(V) CE(sat) h FE, DC CURRENT GAIN L2SA812*LT1 Fig.2 Grounded emitter output characteristics( ) –10.


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