N-Channel MOSFET
FDD4N60NZ — N-Channel UniFETTM II MOSFET
FDD4N60NZ
N-Channel UniFETTM II MOSFET
600 V, 3.4 A, 2.5 Ω
Features
• RDS(on) ...
Description
FDD4N60NZ — N-Channel UniFETTM II MOSFET
FDD4N60NZ
N-Channel UniFETTM II MOSFET
600 V, 3.4 A, 2.5 Ω
Features
RDS(on) = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.7 A Low Gate Charge (Typ. 8.3 nC) Low Crss (Typ. 3.7 pF) 100% Avalanche Tested Improved dv/dt Capability ESD Imoroved Capability RoHS Compliant
Applications
LCD/LED/PDP TV Lighting Uninterruptible Power Supply
November 2013
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFETTM II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D
G S
D
D-PAK
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS
ID
IDM EAS IAR EAR dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
- Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate above 25oC
(Note 1) (Note 2) (Note 1) (Note 1) (Note 3)
TJ, TSTG TL...
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