Preliminary Datasheet
RJK03N8DNS
Silicon N Channel Power MOS FET with Schottky Barrier Diode
Power Switching
R07DS0789EJ0100 Rev.1.00
Feb 29, 2012
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 4.6 m typ. (at VGS = 8.0 V) Pb-free Halogen-free
Outline
RENESAS...
