K4080

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4080 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4080 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES Low on-state resistance RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 24 A) Low QGD: QGD = 6.3 nC TYP. 4.5 V drive available ORDERING INFORMATION PART NUMBER 2SK4080(1)-S27-AY Note 2SK4080-ZK-E1-AY Note 2SK4080-ZK-E2-AY Note PACKAGE TO-251 (MP-3-b) TO-252 (MP-3ZK) TO-252 (MP-3ZK) Note Pb-free (This product does not contain Pb in external electrode.) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±48 ±144 A A Total Power Dissipation (TC = 25°C) PT1 29 W Total Power Dissipation PT2 1.0 W Channel Temperature Tch 150 °C Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Tstg –55 to +150 °C IAS 21 A EAS 44.1 mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH (TO-251) (TO-252) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every countr...