IRF7241PbF

● Trench Technology ● Ultra Low On-Resistance ● P-Channel MOSFET ● Available in Tape & Reel ● Lead-Free VDSS -40V PD - 95294 IRF7241PbF HEXFET® Power MOSFET RDS(on) max (mW) 41@VGS = -10V 70@VGS = -4.5V ID -6.2A -5.0A Description S1 8 A D New trench HEXFET® Power MOSFETs from S 2 International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance S 3 7D 6D per silicon area. This benefit, combined with the ruggedized device design that HEXFET power G 4 5D MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use Top View in battery and load management applications. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor VGS TJ, TSTG Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance Symbol RθJL RθJA www.irf.com Parameter Junction-to-Drain Lead Junction-to-Ambient ƒ Max. -40 -6.2 -4.9 -25 2.5 1.6 20 ± 20 -55 to + 150 Units V A W mW/°C V °C Typ. ––– ––– Max. 20 50 Units °C/W 1 10/6/04 IRF7241PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resista...