LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier
Transistor
We declare that the material of product compliance with...
LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier
Transistor
We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site zand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L2SC4083NWT1G S-L2SC4083NWT1G
3
Ordering Information
Device L2SC4083NWT1G S-L2SC4083NWT1G L2SC4083NWT1G S-L2SC4083NWT1G
Marking 4N 4N
Shipping 3000/Tape&Reel
10000/Tape&Reel
1 2
SC-70/SOT-323
Absolute maximum ratings (Ta=25 oC)
Parameter Collector-base voltage
Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC
Tj Tstg
Limits 20
11 3 50 0.15
150 - 55~+150
Unit V
V V mA
W oC oC
1 BASE
3 COLLECTOR
2 EMITTER
Driver Marking
L2SC4083NWT1G;S-L2SC4083NWT1G=4N
Electrical characteristics (Ta=25 oC)
Parameter
Symbol
Min.
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Collector-base time constant Noise factor
BVCBO BVCEO BVEBO
ICBO IEBO VCE(sat) hFE fT Cob rbb'·Cc NF
20 11 3
56 1.4
Typ.
3.2 0.8
4
3.5
Max.
0.5 0.5 0.5 120
1.5
12
Unit V V V uA uA V
GHz pF
ps
dB
Conditions
IC = 10 µA IC = 1mA IE = 10 µA VCB = 10V VEB = 2V IC/IB = 10mA/5mA VCE/IC = 10V/5mA VCB = 10V , IC = 10mA , f ...