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L2SA1774RT3G Dataheets PDF



Part Number L2SA1774RT3G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description General Purpose Transistors
Datasheet L2SA1774RT3G DatasheetL2SA1774RT3G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. z DEVICE MARKING AND ORDERING INFORMATION Device L2SA1774QT1G S-L2SA1774QT1G L2SA1774QT3G S-L2SA1774QT3G L2SA1774RT1G S-L2SA1774RT1G L2SA1774RT3G S-L2SA1774RT3G L2SA1774ST1G S-L2SA1774ST1G Marking FQ FQ FR FR.

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. z DEVICE MARKING AND ORDERING INFORMATION Device L2SA1774QT1G S-L2SA1774QT1G L2SA1774QT3G S-L2SA1774QT3G L2SA1774RT1G S-L2SA1774RT1G L2SA1774RT3G S-L2SA1774RT3G L2SA1774ST1G S-L2SA1774ST1G Marking FQ FQ FR FR FS Shipping 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel L2SA1774ST3G S-L2SA1774ST3G FS 10000/Tape&Reel !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Limits −60 −50 −6 −0.15 Unit V V V A (DC) PC 0.15 W Tj 150 ˚C Tstg −55~+150 ˚C L2SA1774QT1G Series S-L2SA1774QT1G Series SC-89 COLLECTOR 3 1 BASE 2 EMITTER !Electrical characteristics (Ta=25°C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage BVEBO Collector cutoff current ICBO Emitter cutoff current IEBO Collector-emitter saturation voltage VCE(sat) DC current transfer ratio hFE Transition frequency fT Output capacitance Cob Min. −60 −50 −6 − − − 120 − − Typ. − − − − − − − 140 4.0 Max. − − − −0.1 −0.1 −0.5 560 − 5.0 Unit V V V µA µA V − MHz pF Conditions IC=−50µA IC=−1µA IE=−50µA VCB=−60V VEB=−6V IC/IB=−50mA/−5mA VCE=−6V, IC=−1mA VCE=−12V, IE=2mA, f=30MHz VCB=−12V, IE=0A, f=1MHz !hFE values are classified as follows: Item Q R hFE 120~270 180~390 S 270~560 Rev.O 1/3 COLLECTOR CURRENT : Ic (mA) !Electrical characteristic curves −50 Ta=100˚C −20 25˚C −40˚C −10 VCE=−6V −5 −2 −1 −0.5 −0.2 −0.1 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics COLLECTOR CURRENT : IC (mA) LESHAN RADIO COMPANY, LTD. L2SA1774QT1G Series S-L2SA1774QT1G Series −10 Ta=25˚C −35.0 −31.5 −8 −28.0 −24.5 −6 −21.0 −17.5 −4 −14.0 −10.5 −2 −7.0 −3.5µA IB=0 0 −0.4 −0.8 −1.2 −1.6 −2.0 COLLECTOR TO MITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics (I) COLLECTOR CURRENT : IC (mA) −100 Ta=25˚C −500 −80 −450 −400 −350 −300 −60 −250 −200 −40 −150 −100 −20 −50µA IB=0 0 −1 −2 −3 −4 −5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics (II) DC CURRENT GAIN : hFE 500 Ta=25˚C 200 VCE=−5V −3V −1V 100 50 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current (I) DC CURRENT GAIN : hFE 500 Ta=100˚C 25˚C 200 −40˚C 100 50 −0.2 −0.5 −1 −2 VCE=−6V −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current (II) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −1 Ta=25˚C −0.5 −0.2 −0.1 −0..


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