Document
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
z DEVICE MARKING AND ORDERING INFORMATION
Device
L2SA1774QT1G S-L2SA1774QT1G
L2SA1774QT3G S-L2SA1774QT3G
L2SA1774RT1G S-L2SA1774RT1G
L2SA1774RT3G S-L2SA1774RT3G
L2SA1774ST1G S-L2SA1774ST1G
Marking FQ FQ FR FR FS
Shipping 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel
L2SA1774ST3G S-L2SA1774ST3G
FS
10000/Tape&Reel
!Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current
Collector power dissipation
Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC
Limits −60 −50 −6 −0.15
Unit V V V
A (DC)
PC 0.15 W
Tj 150 ˚C Tstg −55~+150 ˚C
L2SA1774QT1G Series
S-L2SA1774QT1G Series
SC-89
COLLECTOR 3
1 BASE
2 EMITTER
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
hFE
Transition frequency
fT
Output capacitance
Cob
Min. −60 −50 −6
− − − 120 − −
Typ. − − − − − − −
140 4.0
Max. − − −
−0.1 −0.1 −0.5 560
− 5.0
Unit V V V µA µA V −
MHz pF
Conditions IC=−50µA IC=−1µA IE=−50µA VCB=−60V VEB=−6V IC/IB=−50mA/−5mA VCE=−6V, IC=−1mA VCE=−12V, IE=2mA, f=30MHz VCB=−12V, IE=0A, f=1MHz
!hFE values are classified as follows:
Item Q
R
hFE 120~270 180~390
S 270~560
Rev.O 1/3
COLLECTOR CURRENT : Ic (mA)
!Electrical characteristic curves
−50
Ta=100˚C −20 25˚C
−40˚C −10
VCE=−6V
−5
−2 −1 −0.5
−0.2 −0.1
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation characteristics
COLLECTOR CURRENT : IC (mA)
LESHAN RADIO COMPANY, LTD.
L2SA1774QT1G Series
S-L2SA1774QT1G Series
−10 Ta=25˚C
−35.0 −31.5
−8 −28.0 −24.5
−6 −21.0 −17.5
−4 −14.0 −10.5
−2 −7.0 −3.5µA
IB=0 0 −0.4 −0.8 −1.2 −1.6 −2.0
COLLECTOR TO MITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output characteristics (I)
COLLECTOR CURRENT : IC (mA)
−100 Ta=25˚C
−500 −80 −450
−400 −350 −300 −60
−250 −200
−40 −150
−100 −20
−50µA
IB=0 0 −1 −2 −3 −4 −5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output characteristics (II)
DC CURRENT GAIN : hFE
500 Ta=25˚C
200
VCE=−5V
−3V −1V
100
50
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current (I)
DC CURRENT GAIN : hFE
500 Ta=100˚C 25˚C
200 −40˚C
100
50
−0.2 −0.5 −1 −2
VCE=−6V −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs. collector current (II)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
−1 Ta=25˚C
−0.5
−0.2 −0.1 −0..