LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
ƽLow Cob,Cob=2pF(Typ.).
L2SC4081QT1G Serie...
LESHAN RADIO COMPANY, LTD.
General Purpose
Transistors
NPN Silicon
FEATURE
ƽLow Cob,Cob=2pF(Typ.).
L2SC4081QT1G Series S-L2SC4081QT1G Series
ƽEpitaxial planar type.
ƽ
PNP complement:L2SA1576A
ƽWe declare that the material of product compliance with RoHS requirements.
3
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
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DEVICE MARKING AND ORDERING INFORMATION
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Device
L2SC4081QT1G S-L2SC4081QT1G
L2SC4081QT3G S-L2SC4081QT3G
L2SC4081RT1G S-L2SC4081RT1G
L2SC4081RT3G S-L2SC4081RT3G
L2SC4081ST1G S-L2SC4081ST1G
L2SC4081ST3G S-L2SC4081ST3G
Marking BQ
BQ BR
BR BS
BS
Shipping 3000/Tape&Reel
10000/Tape&Reel 3000/Tape&Reel
10000/Tape&Reel 3000/Tape&Reel
10000/Tape&Reel
SC-70/SOT– 323
1 BASE
3 COLLECTOR
2 EMITTER
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
T stg
50 V 60 V 7.0 V 150 mAdc 0.15 W 150 °C -55 ~+150 °C
Rev.O 1/5
LESHAN RADIO COMPANY, LTD.
L2SC4081QT1G Series S-L2SC4081QT1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage (IC = 1 mA) Emitter–Base Breakdown Voltage (IE = 50 µA) Collector–Base Breakdown Voltage (IC = 50 µA) Collector Cutoff Current (VCB = 60 V) Emitter cutoff current (VEB = ...