LBC846AWT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level: 1 ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage LBC846 LBC847, LBC850 LBC848, LBC849 VCEO Collector–Base Voltage LBC846 LBC847, LBC850 LBC848, LBC849 VCBO Emitter–Base Voltage LBC846 LBC847, LBC850 LBC848, LBC849 VEBO Collector Current – Continuous THERMAL CHARACTERISTICS IC Characteristic Symbol Total Device Dissipation FR–5 Board (Note 1.) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction to Ambient (Note 1.) RqJA Junction and Storage Temperature Range TJ, Tstg Value 65 45 30 80 50 30 6.0 6.0 5.0 100 Max 150 2.4 833 –55 to +150 Unit Vdc Vdc Vdc mAdc Unit mW mW/°C °C/W °C LBC846AWT1G Series 3 1 2 SOT–323 /SC–70 1 B ASE 3 COLLECT OR 2 EMIT T ER MARKING DIAGRAM 3 xx xx= Device Marking (See Table Below) 1/6 LESHAN RADIO COMPANY, LTD. DEVICE MARKING AND ORDERING INFORMATION Device Marking LBC846AWT1G 1A LBC846AWT3G 1A LBC846BWT1G 1B LBC846BWT3G 1B LBC847AWT1G 1E LBC847AWT3G 1E LBC847BWT1G 1F LBC847BWT3G 1F LBC847CWT1G 1G LBC847CWT3G 1G LBC848AWT1G 1J LBC848AWT3G 1J LBC848BWT1G 1K LBC848BWT3G 1K LBC848CWT1G 1L LBC848CWT3G LBC849BWT1G 1L 2B LBC849BWT3G 2B LBC849CWT1G 2C LBC849CWT3G 2C LBC850BWT1G 2F LBC850BWT3G LBC850CWT1G 2F 2G LBC850CWT3G ...