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W12NK95Z Dataheets PDF



Part Number W12NK95Z
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description STW12NK95Z
Datasheet W12NK95Z DatasheetW12NK95Z Datasheet (PDF)

STW11NK100Z STW12NK95Z N-channel 950V - 0.69Ω - 10A - TO-247 Zener - Protected SuperMESH™ PowerMOSFET General features www.DataSheet4U.com Type VDSS (@Tjmax) RDS(on) ID PW STW12NK95Z 950 V < 0.90Ω 10 A 230W ■ Gate charge minimized ■ 100% avalanche tested ■ Extremely high dv/dt capability Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special car.

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STW11NK100Z STW12NK95Z N-channel 950V - 0.69Ω - 10A - TO-247 Zener - Protected SuperMESH™ PowerMOSFET General features www.DataSheet4U.com Type VDSS (@Tjmax) RDS(on) ID PW STW12NK95Z 950 V < 0.90Ω 10 A 230W ■ Gate charge minimized ■ 100% avalanche tested ■ Extremely high dv/dt capability Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Applications ■ Switching application TO-247 Internal schematic diagram Order codes Part number STW12NK95Z Marking W12NK95Z Package TO-247 Packaging Tube August 2006 Rev 2 1/14 www.st.com 14 Contents Contents STW12NK95Z 1 2 www.DataSheet4U.com 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STW12NK95Z 1 Electrical ratings www.DataSheet4U.com Table 1. Absolute maximum ratings Symbol Parameter VDS VDGR VGS ID ID IDM(1) PTOT Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20KΩ) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating Factor VESD (G-S) Gate source ESD (HBM-C=100pF, R=1,5KΩ) dv/dt(2) Peak diode recovery voltage slope TJ Operating junction temperature Tstg Storage temperature 1. Pulse width limited by safe operating area 2. ISD ≤10A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX Table 2. Thermal data Symbol Parameter Rthj-case Rthj-a Tl Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose Table 3. Avalanche characteristics Symbol Parameter Avalanche current, repetitive or not-repetitive IAR (pulse width limited by Tj Max) Single pulse avalanche energy EAS (starting Tj=25°C, Id=Iar, Vdd=50V) Electrical ratings Value 950 950 ± 30 10 6.3 40 230 1.85 6000 4.5 -55 to 150 Unit V V V A A A W W/°C V V/ns °C Value 0.54 50 300 Unit °C/W °C/W °C Value 10 500 Unit A mJ 3/14 Electrical ratings STW12NK95Z 1.1 www.DataSheet4U.com Table 4. Gate-source zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit BVGSO Gate-source breakdown voltage Igs=± 1mA (Open Drain) 30 V Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 4/14 STW12NK95Z 2 Electrical characteristics Electrical characteristics www.DataSheet4U.com (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage ID = 1mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating, Tc = 125°C IGSS VGS(th) RDS(on) Gate body leakage current (VGS = 0) VGS = ± 20V Gate threshold voltage VDS = VGS, ID = 100µA Static drain-source on resistance VGS = 10V, ID = 5 A Min. Typ. Max. Unit 950 V 1 µA 50 µA ±10 µA 3 3.75 4.5 V 0.69 0.9 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) Ciss Coss Crss Forward transconductance VDS =15V, ID = 5A Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 12 3500 280 58 S pF pF pF Cosseq(2). Equivalent output capacitance VGS=0, VDS =0V to 760V 117 pF Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDD=760V, ID = 10A VGS =10V (see Figure 15) 113 nC 19 152 nC 60 nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Switching times Symbol Parameter td(on) tr Turn-on Delay Time Rise Time td(off) tf Turn-off Delay Time Fall Time Test conditions VDD=475V, ID=5A, RG=4.7Ω, VGS=10V (see Figure 14) VDD=475V, ID=5A, RG=4.7Ω, VGS=10V (see .


D762 W12NK95Z IRF7353D2PbF


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