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FS50VSJ-03

Mitsubishi Electric Semiconductor

Nch POWER MOSFET

MITSUBISHI Nch POWER MOSFET FS50VSJ-03 HIGH-SPEED SWITCHING USE FS50VSJ-03 OUTLINE DRAWING 1.5MAX. r 10.5MAX. Dimens...


Mitsubishi Electric Semiconductor

FS50VSJ-03

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Description
MITSUBISHI Nch POWER MOSFET FS50VSJ-03 HIGH-SPEED SWITCHING USE FS50VSJ-03 OUTLINE DRAWING 1.5MAX. r 10.5MAX. Dimensions in mm 4.5 1.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3.0 +0.3 –0.5 0 –0 +0.3 1 5 0.8 B 0.5 q w e wr 2.6 ± 0.4 ¡4V DRIVE ¡VDSS ................................................................................. 30V ¡rDS (ON) (MAX) ............................................................. 19mΩ ¡ID ........................................................................................ 50A ¡Integrated Fast Recovery Diode (TYP.) ............ 60ns q q GATE w DRAIN e SOURCE r DRAIN e TO-220S APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 30 ± 20 50 200 50 50 200 45 –55 ~ +150 –55 ~ +150 1.2 4.5 Unit V V A A A A A W °C °C g Feb.1999 L = 30µH (1.5) MITSUBISHI Nch POWER MOSFET FS50VSJ-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage curren...




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