IRFR3806PbF

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage dv/dt Peak Diode Recovery e TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy d IAR Avalanche Current c EAR Repetitive Avalanche Energy f Thermal Resistance Symbol Parameter RθJC Junction-to-Case j RθCS Case-to-Sink, Flat Greased Surface RθJA Junction-to-Ambient ij www.irf.com PD - 97313 IRFR3806PbF IRFU3806PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID 60V 12.6mΩ 15.8mΩ 43A D S G S D G D-Pak I-Pak IRFR3806PbF IRFU3806PbF G Gate D Drain S Source Max. 43 31 170 71 0.47 ± 20 24 -55 to + 175 300 Units A W W/°C V V/ns °C 73 25 7.1 Typ. ––– 0.50 ––– Max. 2.12 ––– 62 mJ A mJ Units °C/W 1 03/04/08 IRFR/U3806PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Co...