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FS50UMJ-06

Mitsubishi Electric Semiconductor

Nch POWER MOSFET

MITSUBISHI Nch POWER MOSFET FS50UMJ-06 HIGH-SPEED SWITCHING USE FS50UMJ-06 OUTLINE DRAWING 10.5MAX. r Dimensions in ...


Mitsubishi Electric Semiconductor

FS50UMJ-06

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MITSUBISHI Nch POWER MOSFET FS50UMJ-06 HIGH-SPEED SWITCHING USE FS50UMJ-06 OUTLINE DRAWING 10.5MAX. r Dimensions in mm 4.5 1.3 3.2 16 12.5MIN. 3.8MAX. 1.0 7.0 f 3.6 0.8 D 0.5 2.6 2.54 2.54 q w e wr q GATE w DRAIN e SOURCE r DRAIN e ¡4V DRIVE ¡VDSS ................................................................................. 60V ¡rDS (ON) (MAX) ............................................................. 20mΩ ¡ID ........................................................................................ 50A ¡Integrated Fast Recovery Diode (TYP.) ............ 70ns q TO-220 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 60 ± 20 50 200 50 50 200 70 –55 ~ +150 –55 ~ +150 2.0 4.5MAX. Unit V V A A A A A W °C °C g Feb.1999 L = 100µH MITSUBISHI Nch POWER MOSFET FS50UMJ-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold...




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